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Ni, X., Lee, J., Wu, M., Li, X., Shimada, R., Özgür, Ü., Baski, A. A., Morkoç, H., Paskova, T., Mulholland, G., Evans, K. R. (2009) Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN. Applied Physics Letters, 95 (10). 101106pp. doi:10.1063/1.3224192

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Reference TypeJournal (article/letter/editorial)
TitleInternal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN
JournalApplied Physics Letters
AuthorsNi, X.Author
Lee, J.Author
Wu, M.Author
Li, X.Author
Shimada, R.Author
Özgür, Ü.Author
Baski, A. A.Author
Morkoç, H.Author
Paskova, T.Author
Mulholland, G.Author
Evans, K. R.Author
Year2009 (September 7)Volume95
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.3224192Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8577175Long-form Identifiermindat:1:5:8577175:6
GUID0
Full ReferenceNi, X., Lee, J., Wu, M., Li, X., Shimada, R., Özgür, Ü., Baski, A. A., Morkoç, H., Paskova, T., Mulholland, G., Evans, K. R. (2009) Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN. Applied Physics Letters, 95 (10). 101106pp. doi:10.1063/1.3224192
Plain TextNi, X., Lee, J., Wu, M., Li, X., Shimada, R., Özgür, Ü., Baski, A. A., Morkoç, H., Paskova, T., Mulholland, G., Evans, K. R. (2009) Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN. Applied Physics Letters, 95 (10). 101106pp. doi:10.1063/1.3224192
In(2009, September) Applied Physics Letters Vol. 95 (10) AIP Publishing

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Lee, J., Li, X., Ni, X., Özgür, Ü., Morkoç, H., Paskova, T., Mulholland, G., Evans, K. R. (2009) On carrier spillover in c- and m-plane InGaN light emitting diodes. Applied Physics Letters, 95 (20). 201113pp. doi:10.1063/1.3266833
Li, X., Ni, X., Lee, J., Wu, M., Özgür, Ü., Morkoç, H., Paskova, T., Mulholland, G., Evans, K. R. (2009) Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes. Applied Physics Letters, 95 (12). 121107pp. doi:10.1063/1.3236538
Ni, X., Wu, M., Lee, J., Li, X., Baski, A. A., Özgür, Ü., Morkoç, H. (2009) Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition. Applied Physics Letters, 95 (11). 111102pp. doi:10.1063/1.3225157
Li, X., Ni, X., Liu, H. Y., Zhang, F., Liu, S., Lee, J., Avrutin, V., Özgür, Ü., Paskova, T., Mulholland, G., Evans, K. R., Morkoç, H. (2011) On the reduction of efficiency loss in polar c -plane and non-polar m -plane InGaN light emitting diodes. physica status solidi (c), 8 (5). 1560-1563 doi:10.1002/pssc.201000893
Ni, X., Li, X., Lee, J., Liu, S., Avrutin, V., Özgür, Ü., Morkoç, H., Matulionis, A., Paskova, T., Mulholland, G., Evans, K. R. (2010) InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes. Applied Physics Letters, 97 (3). 31110pp. doi:10.1063/1.3465658
Leach, J. H., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Paskova, T., Preble, E., Evans, K. R., Lu, Chang-Zhi (2010) Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates. Applied Physics Letters, 96 (10). 102109pp. doi:10.1063/1.3358192
Moore, J. C., Kasliwal, V., Baski, A. A., Ni, X., Özgür, Ü., Morkoç, H. (2007) Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth. Applied Physics Letters, 90 (1). 11913pp. doi:10.1063/1.2429901
Xie, J., Leach, J. H., Ni, X., Wu, M., Shimada, R., Özgür, Ü., Morkoç, H. (2007) Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers. Applied Physics Letters, 91 (26). 262102pp. doi:10.1063/1.2824461
Leach, J. H., Zhu, C. Y., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Liberis, J., Šermukšnis, E., Matulionis, A., Paskova, T., Preble, E., Evans, K. R. (2010) Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates. Applied Physics Letters, 96 (13). 133505pp. doi:10.1063/1.3358392
Ščajev, P., Jarašiūnas, K., Özgür, Ü., Morkoç, H., Leach, J., Paskova, T. (2012) Anisotropy of free-carrier absorption and diffusivity in m-plane GaN. Applied Physics Letters, 100 (2). 22112pp. doi:10.1063/1.3674306
Ni, X., Özgür, Ü., Baski, A. A., Morkoç, H., Zhou, Lin, Smith, David J., Tran, C. A. (2007) Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition. Applied Physics Letters, 90 (18). 182109pp. doi:10.1063/1.2735558
 
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