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(1998, March) Applied Physics Letters Vol. 72 (13) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1998 (March)Volume72
Issue<   13   >
PublisherAIP Publishing
Mindat Ref. ID8520732Long-form Identifiermindat:1:5:8520732:1
GUID0
Full Reference(1998, March) Applied Physics Letters Vol. 72 (13) AIP Publishing
Plain Text(1998, March) Applied Physics Letters Vol. 72 (13) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 72. AIP Publishing

Contains

Edwards, T. J., Turnbull, G. A., Dunn, M. H., Ebrahimzadeh, M., Colville, F. G. (1998) High-power, continuous-wave, singly resonant, intracavity optical parametric oscillator. Applied Physics Letters, 72 (13). 1527-1529 doi:10.1063/1.120572
Mair, R. A., Zeng, K. C., Lin, J. Y., Jiang, H. X., Zhang, B., Dai, L., Botchkarev, A., Kim, W., Morkoç, H., Khan, M. A. (1998) Optical modes within III-nitride multiple quantum well microdisk cavities. Applied Physics Letters, 72 (13). 1530-1532 doi:10.1063/1.120573
Watanabe, Toshio, Ooba, Naoki, Hida, Yasuhiro, Hikita, Makoto (1998) Influence of humidity on refractive index of polymers for optical waveguide and its temperature dependence. Applied Physics Letters, 72 (13). 1533-1535 doi:10.1063/1.120574
McGehee, M. D., Dı́az-Garcı́a, M. A., Hide, F., Gupta, R., Miller, E. K., Moses, D., Heeger, A. J. (1998) Semiconducting polymer distributed feedback lasers. Applied Physics Letters, 72 (13). 1536-1538 doi:10.1063/1.121679
Kneissl, M., Bour, D. P., Johnson, N. M., Romano, L. T., Krusor, B. S., Donaldson, R., Walker, J., Dunnrowicz, C. (1998) Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching. Applied Physics Letters, 72 (13). 1539-1541 doi:10.1063/1.120575
Kung, A. H., Jr-i, Lee, Chen, Poe-Jou (1998) An efficient all-solid-state ultraviolet laser source. Applied Physics Letters, 72 (13). 1542-1544 doi:10.1063/1.120576
Akiyama, Tomoyuki, Tsuchiya, Masahiro, Kamiya, Takeshi (1998) Sub-pJ operation of broadband asymmetric Fabry–Perot all-optical gate with coupled cavity structure. Applied Physics Letters, 72 (13). 1545-1547 doi:10.1063/1.120577
Kodama, Nobuhiro, Takahashi, Tomoko, Hirao, Kazuyuki (1998) Room-temperature persistent spectral hole burning in Sm-doped KLaF4 crystals. Applied Physics Letters, 72 (13). 1548-1549 doi:10.1063/1.120578
Seto, M., de Boer, W. B., Sinnis, V. S., Morrison, A. P., Hoekstra, W., de Jager, S. (1998) Si/SiGe resonant-cavity photodiodes for optical storage applications. Applied Physics Letters, 72 (13). 1550-1552 doi:10.1063/1.121111
Itoh, Masayuki, Sugiura, Hideo, Yasaka, Hiroshi, Kondo, Yasuhiro, Kishi, Kenji, Fukuda, Mitsuo, Itaya, Yoshio (1998) Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth. Applied Physics Letters, 72 (13). 1553-1555 doi:10.1063/1.121112
Zhao, Y., Shu, C. (1998) A fiber laser for effective generation of tunable single- and dual-wavelength mode-locked optical pulses. Applied Physics Letters, 72 (13). 1556-1558 doi:10.1063/1.121113
Oh, Min-Cheol, Lee, Myung-Hyun, Ahn, Joo-Heon, Lee, Hyung-Jong, Han, Seon Gyu (1998) Polymeric wavelength filters with polymer gratings. Applied Physics Letters, 72 (13). 1559-1561 doi:10.1063/1.121114
Yamakawa, Shiro, Hamashima, Keigo, Kinoshita, Takeshi, Sasaki, Keisuke (1998) Temporal solitary subpicosecond pulse propagation in a dye-doped polymer slab waveguide with a negative nonlinear refractive index. Applied Physics Letters, 72 (13). 1562-1564 doi:10.1063/1.121115
Chung, TaekRyong, Hosoda, Naoe, Suga, Tadatomo, Takagi, Hideki (1998) 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature. Applied Physics Letters, 72 (13). 1565-1566 doi:10.1063/1.121116
Draeger, Carsten, Cassereau, Didier, Fink, Mathias (1998) Acoustic time reversal with mode conversion at a solid-fluid interface. Applied Physics Letters, 72 (13). 1567-1569 doi:10.1063/1.121117
Ganguly, B. N., Bletzinger, P. (1998) Fractional dissociation efficiency measurements of D2 in a helical resonator D2–N2 gas mixture discharge. Applied Physics Letters, 72 (13). 1570-1571 doi:10.1063/1.121145
Bai, G.-R., Tsu, I-Fei, Wang, A., Foster, C. M., Murray, C. E., Dravid, V. P. (1998) In situ growth of highly oriented Pb(Zr0.5Ti0.5)O3 thin films by low-temperature metal–organic chemical vapor deposition. Applied Physics Letters, 72 (13). 1572-1574 doi:10.1063/1.121118
Curioni, A., Andreoni, W., Treusch, R., Himpsel, F. J., Haskal, E., Seidler, P., Heske, C., Kakar, S., van Buuren, T., Terminello, L. J. (1998) Atom-resolved electronic spectra for Alq3 from theory and experiment. Applied Physics Letters, 72 (13). 1575-1577 doi:10.1063/1.121119
Liu, X.-Y., Xu, Wei, Foiles, S. M., Adams, J. B. (1998) Atomistic studies of segregation and diffusion in Al-Cu grain boundaries. Applied Physics Letters, 72 (13). 1578-1580 doi:10.1063/1.121120
Ishibashi, Masayoshi, Heike, Seiji, Kajiyama, Hiroshi, Wada, Yasuo, Hashizume, Tomihiro (1998) Characteristics of scanning-probe lithography with a current-controlled exposure system. Applied Physics Letters, 72 (13). 1581-1583 doi:10.1063/1.121121
Lee, W. Y., Mauri, D., Hwang, C. (1998) High-current-density ITOx/NiOx thin-film diodes. Applied Physics Letters, 72 (13). 1584-1586 doi:10.1063/1.121122
Monier, C., Vilela, M. F., Serdiukova, I., Freundlich, A. (1998) Band discontinuity in strained In(As,P)/InP heterostructures. Applied Physics Letters, 72 (13). 1587-1589 doi:10.1063/1.121123
Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J. (1998) Ballistic-electron-emission microscopy and spectroscopy of metal/GaN interfaces. Applied Physics Letters, 72 (13). 1590-1592 doi:10.1063/1.121124
Lee, S. T., Hou, X. Y., Mason, M. G., Tang, C. W. (1998) Energy level alignment at Alq/metal interfaces. Applied Physics Letters, 72 (13). 1593-1595 doi:10.1063/1.121125
Perera, A. G. U., Shen, W. Z., Matsik, S. G., Liu, H. C., Buchanan, M., Schaff, W. J. (1998) GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength at 28 μm. Applied Physics Letters, 72 (13). 1596-1598 doi:10.1063/1.121126
Piva, P. G., Goldberg, R. D., Mitchell, I. V., Chen, Huajie, Feenstra, R. M., Weatherly, G. C., McComb, D. W., Aers, G. C., Poole, P. J., Charbonneau, S. (1998) A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells. Applied Physics Letters, 72 (13). 1599-1601 doi:10.1063/1.121185
Berti, M., De Salvador, D., Drigo, A. V., Romanato, F., Stangl, J., Zerlauth, S., Schäffler, F., Bauer, G. (1998) Lattice parameter in Si1−yCy epilayers: Deviation from Vegard’s rule. Applied Physics Letters, 72 (13). 1602-1604 doi:10.1063/1.121127
Fan, J. C., Chen, C. H., Chen, Y. F. (1998) Observation of persistent photoluminescence in porous silicon: Evidence of surface emission. Applied Physics Letters, 72 (13). 1605-1607 doi:10.1063/1.121128
Bulsara, Mayank T., Leitz, Chris, Fitzgerald, Eugene A. (1998) Relaxed InxGa1−xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs. Applied Physics Letters, 72 (13). 1608-1610 doi:10.1063/1.121129
Zhang, R., Kuech, T. F. (1998) Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy. Applied Physics Letters, 72 (13). 1611-1613 doi:10.1063/1.121144
Wankerl, A., Emerson, D. T., Shealy, J. R. (1998) Submicron selective organometallic vapor phase epitaxy growth using tunable deep UV excitation. Applied Physics Letters, 72 (13). 1614-1616 doi:10.1063/1.121130
Kim, E. S., Usami, N., Shiraki, Y. (1998) Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties. Applied Physics Letters, 72 (13). 1617-1619 doi:10.1063/1.121131
Ringling, J., Kawamura, Y., Schrottke, L., Grahn, H. T., Yoshimatsu, K., Kamada, A., Inoue, N. (1998) Direct evidence of the indirect energy gap in InAlAs/AlAsSb multiple quantum wells by time-resolved photoluminescence. Applied Physics Letters, 72 (13). 1620-1622 doi:10.1063/1.121132
Bidnyk, S., Schmidt, T. J., Cho, Y. H., Gainer, G. H., Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P. (1998) High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells. Applied Physics Letters, 72 (13). 1623-1625 doi:10.1063/1.121133
Kauer, M., Cleaver, J. R. A., Baumberg, J. J., Heberle, A. P. (1998) Femtosecond dynamics in semiconductor lasers: Dark pulse formation. Applied Physics Letters, 72 (13). 1626-1628 doi:10.1063/1.121134
Mutamba, K., Sigurdardóttir, A., Vogt, A., Hartnagel, H. L., Li, E. H. (1998) A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes. Applied Physics Letters, 72 (13). 1629-1631 doi:10.1063/1.121135
Schulze, N., Barrett, D. L., Pensl, G. (1998) Near-equilibrium growth of micropipe-free 6H-SiC single crystals by physical vapor transport. Applied Physics Letters, 72 (13). 1632-1634 doi:10.1063/1.121136
Dittrich, Th., Timoshenko, V. Yu., Rappich, J. (1998) Unusual stabilization of Si surfaces during roughening in fluoride solution. Applied Physics Letters, 72 (13). 1635-1637 doi:10.1063/1.121137
Koeth, J., Dietrich, R., Forchel, A. (1998) GaSb vertical-cavity surface-emitting lasers for the 1.5 μm range. Applied Physics Letters, 72 (13). 1638-1640 doi:10.1063/1.121138
Haralson, J. N., Parks, J. W., Brennan, K. F. (1998) Theoretical study of a GaAs lateral p-i-n photodetector. Applied Physics Letters, 72 (13). 1641-1643 doi:10.1063/1.121146
Keil, Ulrich D., Jensen, Jacob R., Hvam, Jo/rn M. (1998) Transient measurements with an ultrafast scanning tunneling microscope on semiconductor surfaces. Applied Physics Letters, 72 (13). 1644-1646 doi:10.1063/1.121139
Ellmers, C., Girndt, A., Hofmann, M., Knorr, A., Rühle, W. W., Jahnke, F., Koch, S. W., Hanke, C., Korte, L., Hoyler, C. (1998) Measurement and calculation of gain spectra for (GaIn)As/(AlGa)As single quantum well lasers. Applied Physics Letters, 72 (13). 1647-1649 doi:10.1063/1.121140
Maksimov, I. L., Elistratov, A. A. (1998) Magnetization curves and hysteretic losses in superconducting films with edge barrier. Applied Physics Letters, 72 (13). 1650-1652 doi:10.1063/1.121141
Dieleman, P., Klapwijk, T. M. (1998) Shot noise beyond the Tucker theory in niobium tunnel junction mixers. Applied Physics Letters, 72 (13). 1653-1655 doi:10.1063/1.121142
Han, Wenhai, Lindsay, S. M. (1998) Probing molecular ordering at a liquid-solid interface with a magnetically oscillated atomic force microscope. Applied Physics Letters, 72 (13). 1656-1658 doi:10.1063/1.121143

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