Chung, TaekRyong, Hosoda, Naoe, Suga, Tadatomo, Takagi, Hideki (1998) 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature. Applied Physics Letters, 72 (13). 1565-1566 doi:10.1063/1.121116
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature | ||
| Journal | Applied Physics Letters | ||
| Authors | Chung, TaekRyong | Author | |
| Hosoda, Naoe | Author | ||
| Suga, Tadatomo | Author | ||
| Takagi, Hideki | Author | ||
| Year | 1998 (March 30) | Volume | 72 |
| Issue | 13 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.121116Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8520744 | Long-form Identifier | mindat:1:5:8520744:6 |
| GUID | 0 | ||
| Full Reference | Chung, TaekRyong, Hosoda, Naoe, Suga, Tadatomo, Takagi, Hideki (1998) 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature. Applied Physics Letters, 72 (13). 1565-1566 doi:10.1063/1.121116 | ||
| Plain Text | Chung, TaekRyong, Hosoda, Naoe, Suga, Tadatomo, Takagi, Hideki (1998) 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature. Applied Physics Letters, 72 (13). 1565-1566 doi:10.1063/1.121116 | ||
| In | (1998, March) Applied Physics Letters Vol. 72 (13) AIP Publishing | ||
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