Schütz, Reiner, Murota, Junichi, Maeda, Takahiro, Kircher, Roland, Yokoo, Kuniyoshi, Ono, Shoichi (1992) Low‐temperature Si/Si1−xGex/Si heterostructure growth at high Ge fractions by low‐pressure chemical vapor deposition. Applied Physics Letters, 61 (22). 2674-2676 doi:10.1063/1.108105

See Also

These are possibly similar items as determined by title/reference text matching only.

	Goto, Kinya, Murota, Junichi, Maeda, Takahiro, SchÜtz, Reiner, Aizawa, Kiyohito, Kircher, Roland, Yokoo, Kuniyoshi, Ono, Shoichi (1993) Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition. Japanese Journal of Applied Physics, 32. 438-441 doi:10.1143/jjap.32.438
	Murota, Junichi, Ono, Shoichi (1994) Low-Temperature Epitaxial Growth ofSi/Si1-xGex/SiHeterostructure by Chemical Vapor Deposition. Japanese Journal of Applied Physics, 33. 2290-2299 doi:10.1143/jjap.33.2290
	Sakuraba, Masao, Murota, Junichi, Ono, Shoichi (1994) Stability of the dimer structure formed on Si(100) by ultraclean low‐pressure chemical‐vapor deposition. Journal of Applied Physics, 75 (7). 3701-3703 doi:10.1063/1.356041
	Jang, Syun‐Ming, Kim, Hyoun‐Woo, Reif, Rafael (1992) Thermal stability of Si/Si1−xGex/Si heterostructures deposited by very low pressure chemical vapor deposition. Applied Physics Letters, 61 (3). 315-317 doi:10.1063/1.107923
	Seo, Takahiro, Sakuraba, Masao, Murota, Junichi (2008) Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1−xGex/Si(100) heterostructure. Applied Surface Science, 254. 6265-6267 doi:10.1016/j.apsusc.2008.02.153
	Tao, Ke, Kurosawa, Yoshinori, Hanna, Jun-ichi (2013) Low-temperature epitaxial growth of high quality Si1−xGex (x ≥ 0.99) films on Si(001) wafer by reactive thermal chemical vapor deposition. Applied Physics Letters, 102 (18). 182109pp. doi:10.1063/1.4804362
	Tanno, Hiroki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi (2008) Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition. Applied Surface Science, 254. 6086-6089 doi:10.1016/j.apsusc.2008.02.132
	Matsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Ono, Shoichi (1992) Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 61 (24). 2908-2910 doi:10.1063/1.108018
	Fukuda, Koichi, Murota, Junichi, Ono, Shoichi, Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro (1991) Electron‐cyclotron‐resonance plasma‐enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing. Applied Physics Letters, 59 (22). 2853-2855 doi:10.1063/1.105855
	Kircher, Roland, Furuno, Makoto, Murota, Junichi, Ono, Shoichi (1991) Low-temperature epitaxial growth of in-situ doped silicon films. Journal of Crystal Growth, 115 (1). 439-442 doi:10.1016/0022-0248(91)90782-z
	Murota, Junichi, Sakuraba, Masao, Ono, Shoichi (1993) Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4gas. Applied Physics Letters, 62 (19). 2353-2355 doi:10.1063/1.109416