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Kircher, Roland, Furuno, Makoto, Murota, Junichi, Ono, Shoichi (1991) Low-temperature epitaxial growth of in-situ doped silicon films. Journal of Crystal Growth, 115 (1). 439-442 doi:10.1016/0022-0248(91)90782-z

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Reference TypeJournal (article/letter/editorial)
TitleLow-temperature epitaxial growth of in-situ doped silicon films
JournalJournal of Crystal Growth
AuthorsKircher, RolandAuthor
Furuno, MakotoAuthor
Murota, JunichiAuthor
Ono, ShoichiAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90782-zSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2804041Long-form Identifiermindat:1:5:2804041:3
GUID0
Full ReferenceKircher, Roland, Furuno, Makoto, Murota, Junichi, Ono, Shoichi (1991) Low-temperature epitaxial growth of in-situ doped silicon films. Journal of Crystal Growth, 115 (1). 439-442 doi:10.1016/0022-0248(91)90782-z
Plain TextKircher, Roland, Furuno, Makoto, Murota, Junichi, Ono, Shoichi (1991) Low-temperature epitaxial growth of in-situ doped silicon films. Journal of Crystal Growth, 115 (1). 439-442 doi:10.1016/0022-0248(91)90782-z
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Sakuraba, Masao, Murota, Junichi, Mikoshiba, Nobuo, Ono, Shoichi (1991) Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition. Journal of Crystal Growth, 115 (1). 79-82 doi:10.1016/0022-0248(91)90716-i
Kato, Manabu, Murota, Junichi, Ono, Shoichi (1991) Control of composition and deposition rate in Si-Ge CVD epitaxy on Si. Journal of Crystal Growth, 115 (1). 117-121 doi:10.1016/0022-0248(91)90723-i
KIRCHER, R., FURUNO, M., MUROTA, J., ONO, S. (1991) LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991292
Yamauchi, Satoshi, Hariu, Takashi, Ono, Shoichi (1991) Effect of enhanced reactivity in plasma-assisted epitaxial growth of ZnSe. Journal of Crystal Growth, 115 (1). 660-663 doi:10.1016/0022-0248(91)90822-m
Schütz, Reiner, Murota, Junichi, Maeda, Takahiro, Kircher, Roland, Yokoo, Kuniyoshi, Ono, Shoichi (1992) Low‐temperature Si/Si1−xGex/Si heterostructure growth at high Ge fractions by low‐pressure chemical vapor deposition. Applied Physics Letters, 61 (22). 2674-2676 doi:10.1063/1.108105
Murota, Junichi, Ono, Shoichi (1994) Low-Temperature Epitaxial Growth ofSi/Si1-xGex/SiHeterostructure by Chemical Vapor Deposition. Japanese Journal of Applied Physics, 33. 2290-2299 doi:10.1143/jjap.33.2290
Kita, R., Hase, T., Sasaki, M., Morishita, T., Tanaka, S. (1991) Epitaxial growth of CuO thin films by in situ oxidation of Cu thin films. Journal of Crystal Growth, 115 (1). 752-757 doi:10.1016/0022-0248(91)90839-w
Kato, Manabu, Sato, Taketoshi, Murota, Junichi, Mikoshiba, Nobuo (1990) Nucleation control of silicon on silicon oxide for low-temperature CVD and silicon selective epitaxy. Journal of Crystal Growth, 99 (1). 240-244 doi:10.1016/0022-0248(90)90520-u
Muranoi, Tetsuo (1991) PL and SIMS of vapor phase epitaxial ZnSe films. Journal of Crystal Growth, 115 (1). 679-682 doi:10.1016/0022-0248(91)90826-q
(1991) Author index. Journal of Crystal Growth, 115 (1). 836-845 doi:10.1016/0022-0248(91)90856-z
Yoshioka, Yasushi, Yoda, Hiroki, Kasuga, Masanobu (1991) Homo-epitaxial growth of CdTe by sublimation under low pressure. Journal of Crystal Growth, 115 (1). 705-710 doi:10.1016/0022-0248(91)90831-o
 
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