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Matsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Ono, Shoichi (1992) Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 61 (24). 2908-2910 doi:10.1063/1.108018

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Reference TypeJournal (article/letter/editorial)
TitleInversion from selective homoepitaxy of Si to selective Si film deposition on SiO2using an ultraclean electron cyclotron resonance plasma
JournalApplied Physics Letters
AuthorsMatsuura, TakashiAuthor
Ohmi, TadahiroAuthor
Murota, JunichiAuthor
Ono, ShoichiAuthor
Year1992 (December 14)Volume61
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.108018Search in ResearchGate
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Mindat Ref. ID8501124Long-form Identifiermindat:1:5:8501124:7
GUID0
Full ReferenceMatsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Ono, Shoichi (1992) Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 61 (24). 2908-2910 doi:10.1063/1.108018
Plain TextMatsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Ono, Shoichi (1992) Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 61 (24). 2908-2910 doi:10.1063/1.108018
In(1992, December) Applied Physics Letters Vol. 61 (24) AIP Publishing

See Also

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Fukuda, Koichi, Murota, Junichi, Ono, Shoichi, Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro (1991) Electron‐cyclotron‐resonance plasma‐enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing. Applied Physics Letters, 59 (22). 2853-2855 doi:10.1063/1.105855
Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo, Kawashima, Tadashi, Yamashita, Yoshihiro (1990) Directional etching of Si with perfect selectivity to SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 56 (14). 1339-1341 doi:10.1063/1.103203
Uetake, Hiroaki, Matsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo (1990) Anisotropic etching of n+ polycrystalline silicon with high selectivity using a chlorine and nitrogen plasma in an ultraclean electron cyclotron resonance etcher. Applied Physics Letters, 57 (6). 596-598 doi:10.1063/1.103609
Murota, Junichi, Nakamura, Naoto, Kato, Manabu, Mikoshiba, Nobuo, Ohmi, Tadahiro (1989) Low‐temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment. Applied Physics Letters, 54 (11). 1007-1009 doi:10.1063/1.100781
Takeuchi, Hajime, Matsuura, Takashi, Murota, Junichi (2000) Contribution of ions and radicals in etching of Si[sub 1−x]Ge[sub x] epitaxial films using an electron-cyclotron-resonance chlorine plasma. Applied Physics Letters, 77 (12). 1828pp. doi:10.1063/1.1310624
Matsuura, Takashi, Murota, Junichi, Sawada, Yasuji, Ohmi, Tadahiro (1993) Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar+ion irradiation. Applied Physics Letters, 63 (20). 2803-2805 doi:10.1063/1.110340
Sakuraba, Masao, Murota, Junichi, Ono, Shoichi (1994) Stability of the dimer structure formed on Si(100) by ultraclean low‐pressure chemical‐vapor deposition. Journal of Applied Physics, 75 (7). 3701-3703 doi:10.1063/1.356041
Matsuura, Takashi, Honda, Yasuhiko, Murota, Junichi (1999) Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma. Applied Physics Letters, 74 (23). 3573-3575 doi:10.1063/1.124165
Schütz, Reiner, Murota, Junichi, Maeda, Takahiro, Kircher, Roland, Yokoo, Kuniyoshi, Ono, Shoichi (1992) Low‐temperature Si/Si1−xGex/Si heterostructure growth at high Ge fractions by low‐pressure chemical vapor deposition. Applied Physics Letters, 61 (22). 2674-2676 doi:10.1063/1.108105
Kanetsuna, Toshikazu, Matsuura, Takashi, Murota, Junichi (2001) Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma. Journal of the Electrochemical Society, 148. doi:10.1149/1.1380258
Ishii, Hiromu, Takahashi, Yasuo, Murota, Junichi (1985) Selective Ge deposition on Si using thermal decomposition of GeH4. Applied Physics Letters, 47 (8). 863-865 doi:10.1063/1.96011
 
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