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Krastev, V., Marinova, Ts., Karpuzov, D., Kalitzova, M., Vitali, G., Rossi, M. (1993) XPS study of laser-annealed ion-implanted GaAs. Surface and Interface Analysis, 20 (12). 955-958 doi:10.1002/sia.740201205

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Reference TypeJournal (article/letter/editorial)
TitleXPS study of laser-annealed ion-implanted GaAs
JournalSurface and Interface Analysis
AuthorsKrastev, V.Author
Marinova, Ts.Author
Karpuzov, D.Author
Kalitzova, M.Author
Vitali, G.Author
Rossi, M.Author
Year1993 (November)Volume20
Issue12
PublisherWiley
DOIdoi:10.1002/sia.740201205Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6504053Long-form Identifiermindat:1:5:6504053:3
GUID0
Full ReferenceKrastev, V., Marinova, Ts., Karpuzov, D., Kalitzova, M., Vitali, G., Rossi, M. (1993) XPS study of laser-annealed ion-implanted GaAs. Surface and Interface Analysis, 20 (12). 955-958 doi:10.1002/sia.740201205
Plain TextKrastev, V., Marinova, Ts., Karpuzov, D., Kalitzova, M., Vitali, G., Rossi, M. (1993) XPS study of laser-annealed ion-implanted GaAs. Surface and Interface Analysis, 20 (12). 955-958 doi:10.1002/sia.740201205
In(1993, November) Surface and Interface Analysis Vol. 20 (12) Wiley

See Also

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Krastev, V., Marinova, Ts., Kalitzova, M.G., Vitali, G., Pizzuto, C. (1996) XPS Study of Laser Annealed Ion Implanted InP. Materials Science Forum, 207. 741-744 doi:10.4028/www.scientific.net/msf.207-209.741
Kalitzova, M, Karpuzov, D, Marinova, Ts, Krastev, V, Vitali, G, Pizzuto, C, Zollo, G (1997) InP crystals-ion implantation and laser annealing: RHEED, XPS and computer simulation studies. Applied Surface Science, 115. 1-9 doi:10.1016/s0169-4332(96)00855-0
Marinova, Ts, Kakanakova-Georgieva, A, Kalitzova, M, Vitali, G, Pizzuto, C, Zollo, G (1997) XPS depth profiling of laser-annealed Zn+-implanted GaAs. Applied Surface Science, 109. 80-86 doi:10.1016/s0169-4332(96)00744-1
Rossi, M., Vitali, G., Karpuzov, D., Kalitzova, M., Budinov, H. (1991) Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs. Journal of Materials Science, 26. 3337-3342 doi:10.1007/bf01124682
Vitali, G., Rossi, M., Karpuzov, D., Budinov, H., Kalitzova, M. (1991) Low‐power pulsed‐laser annealing of implanted GaAs. Journal of Applied Physics, 69 (7). 3882-3885 doi:10.1063/1.348445
Petkov, K., Krastev, V., Marinova, Ts. (1992) XPS analysis of thin chromium films. Surface and Interface Analysis, 18 (7). 487-490 doi:10.1002/sia.740180705
Petkov, K., Krastev, V., Marinova, Ts. (1994) XPS study of amorphous As2S3 films deposited onto chromium layers. Surface and Interface Analysis, 22 (1). 202-205 doi:10.1002/sia.740220145
Vitali, G., Rossi, M., Karpuzov, D., Budinov, H., Kalitzova, M., Katardjiev, I. (1991) RHEED and RBS analysis of low-power laser annealed GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1077-1080 doi:10.1016/0168-583x(91)95768-9
Vitali, G., Zollo, G., Pizzuto, C., Manno, D., Kalitzova, M., Rossi, M. (1996) Cross‐sectional high resolution electron microscopy of Zn+ implanted and low‐power pulsed‐laser annealed GaAs. Applied Physics Letters, 69 (26). 4072-4074 doi:10.1063/1.117822
Pashov, N., Vitali, G., Kalitzova, M., Rossi, M. (1995) Lattice defects in ion implanted GaAs. physica status solidi (a), 150 (1). 239-245 doi:10.1002/pssa.2211500121
Kalitzova, M., Karpuzov, D., Pashov, N., Vitali, G., Rossi, M., Scholz, R. (1993) Damage distribution in GaAs implanted at elevated temperature. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 647-650 doi:10.1016/0168-583x(93)96201-m
 
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