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(1986, July) Surface and Interface Analysis Vol. 9 (5) Wiley

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Reference TypeJournal (issue)
JournalSurface and Interface Analysis
Year1986 (July)Volume9
Issue<   5   >
PublisherWiley
Mindat Ref. ID6501030Long-form Identifiermindat:1:5:6501030:1
GUID0
Full Reference(1986, July) Surface and Interface Analysis Vol. 9 (5) Wiley
Plain Text(1986, July) Surface and Interface Analysis Vol. 9 (5) Wiley
In(n.d.) Surface and Interface Analysis Vol. 9. Wiley

Contains

(1986) Masthead. Surface and Interface Analysis, 9 (5). doi:10.1002/sia.740090501
Heckingbottom, R. (1986) Perspectives in surface and interface analysis for electronic devices and circuits. Surface and Interface Analysis, 9 (5). 265-273 doi:10.1002/sia.740090502
Oehrlein, G. S., Coyle, G. J., Clabes, J. G., Lee, Y. H. (1986) Study of near-surface disorder and surface residues after reactive Ion etching of Silicon. Surface and Interface Analysis, 9 (5). 275-281 doi:10.1002/sia.740090503
Alnot, P., Huber, A. M., Olivier, J. (1986) Applications of SIMS, SAES and XPS to problems in the semiconductor industry. Surface and Interface Analysis, 9 (5). 283-291 doi:10.1002/sia.740090504
Oude Elferink, J. B., Dunselman, K., Evers, E. J., Habraken, F. H. P. M., Van Der Weg, W. F., Holsbrink, J. (1986) Analysis of plasma enhanced chemical vapour deposition-grown Borophosphosilicate glass with a combination of Rutherford backscattering and elastic recoil detection. Surface and Interface Analysis, 9 (5). 293-296 doi:10.1002/sia.740090505
Tschersich, K. G., Littmark, U., Fleischhauer, H. P. (1986) Depth profiling of carbonaceous films, producedin situ in the Tokamak TEXTOR. Surface and Interface Analysis, 9 (5). 297-301 doi:10.1002/sia.740090506
Boudewijn, P. R., Leys, M. R., Roozeboom, F. (1986) SIMS analysis of AlxGa1-xas/gaas layered structures grown by metal-organic vapour phase Epitaxy. Surface and Interface Analysis, 9 (5). 303-308 doi:10.1002/sia.740090507
Brown, A., van den Berg, J. A., Vickerman, J. C. (1986) The application of secondary Ion mass spectrometry to surface analysis of semiconductor substrates and devices. Surface and Interface Analysis, 9 (5). 309-317 doi:10.1002/sia.740090508
Hoflund, Gar B., Corallo, Cheryl F. (1986) A characterization study of the native Oxide layer formed on chemically Etched InP (111). Surface and Interface Analysis, 9 (5). 319-323 doi:10.1002/sia.740090509
Stingeder, G., Grundner, M., Grasserbauer, M. (1986) Investigation of surface contamination on Silicon Wafers with SIMS. Surface and Interface Analysis, 9 (5). 325-326 doi:10.1002/sia.740090510
Hubin, A., Terryn, H., Vereecken, J., Moens, M., Adams, F. (1986) AES and SIMS investigation of different CuxS/CdS solar cells. Surface and Interface Analysis, 9 (5). 327 doi:10.1002/sia.740090511
Barna, P. B., Gosztola, L., Zalar, A., Rasigni, M. (1986) Direct TEM study of the roughening of SiO2/Si interface induced during AES depth profiling. Surface and Interface Analysis, 9 (5). 328 doi:10.1002/sia.740090512
Queirolo, G., De Santi, G., Ottaviani, G. (1986) Low temperature oxidation of titanium and titanium silicide. Surface and Interface Analysis, 9 (5). 329 doi:10.1002/sia.740090513
Berghe, R. Vanden, Vlaeminck, R., Saille, M., Van Paemel, R. (1986) AES, SEM and EDX study of diffusion phenomena in reed switches. Surface and Interface Analysis, 9 (5). 330 doi:10.1002/sia.740090514
Juliet, P., Blanchard, B. (1986) An AES study of the electron-induced dissociation of SiO2. Surface and Interface Analysis, 9 (5). 331 doi:10.1002/sia.740090515
Duvigneaud, P. H., Hennaut, P. F., Laudet, A., Terryn, H., Vereecken, J. (1986) AES study of thermal behaviour of Sb-doped Sn-oxide coatings. Surface and Interface Analysis, 9 (5). 332 doi:10.1002/sia.740090516
Fitzgerald, A. G., Muir, G. (1986) An electron spectroscopy study of sputtered nickel ferrite films. Surface and Interface Analysis, 9 (5). 333 doi:10.1002/sia.740090517
Fitzgerald, A. G., McHardy, C. P. (1986) The diffusion of copper and silver in amorphous chalcogenide thin films. Surface and Interface Analysis, 9 (5). 334 doi:10.1002/sia.740090518
Miethe, K., Gries, W. H., Pöcker, A. (1986) Effects of a caesium Ion beam on GaAs. Surface and Interface Analysis, 9 (5). 335 doi:10.1002/sia.740090519
Di Castro, V., Polzonetti, G. (1986) Photoemission study of Cu/Al interface using Synchrotron radiation. Surface and Interface Analysis, 9 (5). 336-337 doi:10.1002/sia.740090520
Tollet, H., Bielen, P., Creemers, C., Van Hove, H., Neyens, A., Maex, K., De Keersmaecker, R. F. (1986) ISS-study of dopant redistribution in TiSi2 layers during silicidation by rapid thermal processing. Surface and Interface Analysis, 9 (5). 338-339 doi:10.1002/sia.740090521
Avau, D., Vandervorst, W., Maes, H. E. (1986) SIMS-analysis of shallow implants in silicon. Surface and Interface Analysis, 9 (5). 340 doi:10.1002/sia.740090522
Remmerie, J., Vandervorst, W., Maes, H. E. (1986) Quantitative analysis of silicon-silicon nitride interfacial regions using auger electron spectroscopy. Surface and Interface Analysis, 9 (5). 340 doi:10.1002/sia.740090523
Frenzel, H., Schlaak, W., Steckenborn, A. (1986) Applications of SIMS to III/V-compounds. Surface and Interface Analysis, 9 (5). 340 doi:10.1002/sia.740090524
Von Rosenstiel, A. P. (1986) Investigations of electrical contacts by complementary techniques of micro- and surface analysis. Surface and Interface Analysis, 9 (5). 340-341 doi:10.1002/sia.740090525
Riahi, A., Puchhammer, M., Störi, H., Colombier, C., Lux, B. (1986) Characterization of CVD-layers by scanning Auger microscopy. Surface and Interface Analysis, 9 (5). 341 doi:10.1002/sia.740090526
Bogaerts, W. F. L., Straetmans, R. F. J., van Haute, A. A. (1986) Scanning Auger microprobe investigation of segregation phenomena in Sn/Pb electronic contacts. Surface and Interface Analysis, 9 (5). 341 doi:10.1002/sia.740090527
Demanet, C. M. (1986) Diffusion of Cr dopant from substrate GaAs into LPE grown epilayers. Surface and Interface Analysis, 9 (5). 341 doi:10.1002/sia.740090528
Lamouche, D., Clechet, P., Martin, J. R., Person, P., Chevarier, A., Chevarier, N., Stern, M. (1986) Ion beam analysis of electroless thin layers deposits used for Ohmic contacts onto GaAs. Surface and Interface Analysis, 9 (5). 342 doi:10.1002/sia.740090529
Etienne, P., Alnot, P., Rochette, J. F., Massies, J. (1986) Auger profile on AlxGa1−x as protected by as and GaAs. Surface and Interface Analysis, 9 (5). 342 doi:10.1002/sia.740090530
Battistoni, C., Gastaldi, L., Mattogno, G., Viticoli, S. (1986) An XPS study of layered AB2×4 semiconductors. Surface and Interface Analysis, 9 (5). 342 doi:10.1002/sia.740090531

See Also

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