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van Swaaij, R.A.C.M.M., Kind, R., Zeman, M. (2012) Recombination efficacy in a-Si:H p-i-n devices. Journal of Non-Crystalline Solids, 358 (17) 2190-2193 doi:10.1016/j.jnoncrysol.2011.12.037

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Reference TypeJournal (article/letter/editorial)
TitleRecombination efficacy in a-Si:H p-i-n devices
JournalJournal of Non-Crystalline Solids
Authorsvan Swaaij, R.A.C.M.M.Author
Kind, R.Author
Zeman, M.Author
Year2012 (September)Volume358
Issue17
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2011.12.037Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID648707Long-form Identifiermindat:1:5:648707:6
GUID0
Full Referencevan Swaaij, R.A.C.M.M., Kind, R., Zeman, M. (2012) Recombination efficacy in a-Si:H p-i-n devices. Journal of Non-Crystalline Solids, 358 (17) 2190-2193 doi:10.1016/j.jnoncrysol.2011.12.037
Plain Textvan Swaaij, R.A.C.M.M., Kind, R., Zeman, M. (2012) Recombination efficacy in a-Si:H p-i-n devices. Journal of Non-Crystalline Solids, 358 (17) 2190-2193 doi:10.1016/j.jnoncrysol.2011.12.037
In(2012, September) Journal of Non-Crystalline Solids Vol. 358 (17) Elsevier BV

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van Swaaij, R.A.C.M.M, Nádazdy, V, Zeman, M, Pincik, E, Metselaar, J.W (2000) Defect re-distribution in amorphous silicon below equilibration temperature. Journal of Non-Crystalline Solids, 266. 553-557 doi:10.1016/s0022-3093(99)00845-5
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Roca i Cabarrocas, P., Cariou, R., Labrune, M. (2012) Low temperature plasma deposition of silicon thin films: From amorphous to crystalline. Journal of Non-Crystalline Solids, 358 (17) 2000-2003 doi:10.1016/j.jnoncrysol.2011.12.113
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