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Ogihara, C., Inagaki, Y., Taketa, A., Morigaki, K. (2012) Thermal quenching of defect photoluminescence and recombination rates of electron–hole pairs in a-Si:H. Journal of Non-Crystalline Solids, 358 (17) 2004-2006 doi:10.1016/j.jnoncrysol.2011.12.086

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Reference TypeJournal (article/letter/editorial)
TitleThermal quenching of defect photoluminescence and recombination rates of electron–hole pairs in a-Si:H
JournalJournal of Non-Crystalline Solids
AuthorsOgihara, C.Author
Inagaki, Y.Author
Taketa, A.Author
Morigaki, K.Author
Year2012 (September)Volume358
Issue17
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2011.12.086Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID648743Long-form Identifiermindat:1:5:648743:4
GUID0
Full ReferenceOgihara, C., Inagaki, Y., Taketa, A., Morigaki, K. (2012) Thermal quenching of defect photoluminescence and recombination rates of electron–hole pairs in a-Si:H. Journal of Non-Crystalline Solids, 358 (17) 2004-2006 doi:10.1016/j.jnoncrysol.2011.12.086
Plain TextOgihara, C., Inagaki, Y., Taketa, A., Morigaki, K. (2012) Thermal quenching of defect photoluminescence and recombination rates of electron–hole pairs in a-Si:H. Journal of Non-Crystalline Solids, 358 (17) 2004-2006 doi:10.1016/j.jnoncrysol.2011.12.086
In(2012, September) Journal of Non-Crystalline Solids Vol. 358 (17) Elsevier BV

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Ogihara, C., Morigaki, K. (2009) Temperature variation of radiative recombination rate of electron-hole pairs responsible for defect photoluminescence in a-Si:H. physica status solidi (c), 6. doi:10.1002/pssc.200881329
Ogihara, C., Inagaki, Y., Morigaki, K. (2011) Light-induced effects on the radiative recombination rate of electron-hole pairs in a-Si:H. physica status solidi (c), 8 (9). 2792-2795 doi:10.1002/pssc.201084056
Ogihara, C., Yoshimura, T., Fujita, Y., Morigaki, K. (2004) Light-induced effects on low energy photoluminescence in a-Si:H investigated by frequency-resolved spectroscopy. Journal of Non-Crystalline Solids, 338. 452-455 doi:10.1016/j.jnoncrysol.2004.03.017
Ogihara, C., Yu, X., Morigaki, K. (2008) Analysis of lifetime distribution of defect luminescence in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 354 (19) 2121-2125 doi:10.1016/j.jnoncrysol.2007.10.080
van Swaaij, R.A.C.M.M., Kind, R., Zeman, M. (2012) Recombination efficacy in a-Si:H p-i-n devices. Journal of Non-Crystalline Solids, 358 (17) 2190-2193 doi:10.1016/j.jnoncrysol.2011.12.037
Ogihara, C, Takemura, H, Yoshimura, T, Morigaki, K (2002) Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si:H. Journal of Non-Crystalline Solids, 299. 637-641 doi:10.1016/s0022-3093(01)01027-4
Ogihara, C., Morigaki, K. (2012) Temperature variation of non-radiative recombination rate in a-Si:H films. physica status solidi (c), 9 (12). 2574-2577 doi:10.1002/pssc.201200199
Ogihara, C., Nomiyama, T., Yamamoto, H., Nakanishi, K., Harada, J., Yu, X., Morigaki, K. (2006) Light-induced creation of defects related to low energy photoluminescence in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 352 (9) 1064-1067 doi:10.1016/j.jnoncrysol.2005.11.094
Astakhov, Oleksandr, Smirnov, Vladimir, Carius, Reinhard, Petrusenko, Yuri, Borysenko, Valeriy, Böttler, Wanjiao, Finger, Friedhelm (2012) Variation of the defect density in a-Si:H and μc-Si:H based solar cells with 2MeV electron bombardment. Journal of Non-Crystalline Solids, 358 (17) 2198-2201 doi:10.1016/j.jnoncrysol.2011.12.091
Longeaud, C., Schmidt, J.A. (2012) a-Si:H transport parameters from experiments based on photoconductivity. Journal of Non-Crystalline Solids, 358 (17) 2052-2056 doi:10.1016/j.jnoncrysol.2011.11.018
Lips, K., Boehme, C., Fuhs, W. (2004) Recombination in μc-Si:H pin solar cells. Journal of Non-Crystalline Solids, 338. 702-705 doi:10.1016/j.jnoncrysol.2004.03.060
 
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