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Bakker, J.P.R, van der Horst, B.J, Dijkhuis, J.I (2002) Simulations of generation–recombination noise of n–i–n a-Si:H devices using AMPS-1D. Journal of Non-Crystalline Solids, 299. 1256-1260 doi:10.1016/s0022-3093(01)01091-2

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Reference TypeJournal (article/letter/editorial)
TitleSimulations of generation–recombination noise of n–i–n a-Si:H devices using AMPS-1D
JournalJournal of Non-Crystalline Solids
AuthorsBakker, J.P.RAuthor
van der Horst, B.JAuthor
Dijkhuis, J.IAuthor
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)01091-2Search in ResearchGate
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Mindat Ref. ID640251Long-form Identifiermindat:1:5:640251:2
GUID0
Full ReferenceBakker, J.P.R, van der Horst, B.J, Dijkhuis, J.I (2002) Simulations of generation–recombination noise of n–i–n a-Si:H devices using AMPS-1D. Journal of Non-Crystalline Solids, 299. 1256-1260 doi:10.1016/s0022-3093(01)01091-2
Plain TextBakker, J.P.R, van der Horst, B.J, Dijkhuis, J.I (2002) Simulations of generation–recombination noise of n–i–n a-Si:H devices using AMPS-1D. Journal of Non-Crystalline Solids, 299. 1256-1260 doi:10.1016/s0022-3093(01)01091-2
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Bakker, J.P.R., van Capel, P.J.S., Fine, B.V., Dijkhuis, J.I. (2004) New experimental evidence for the role of long-range potential fluctuations in the mechanism of 1/f noise in a-Si:H. Journal of Non-Crystalline Solids, 338. 310-313 doi:10.1016/j.jnoncrysol.2004.02.092
Balberg, I (2002) Phototransport spectroscopy of a-Si:H and μc-Si:H. Journal of Non-Crystalline Solids, 299. 531-535 doi:10.1016/s0022-3093(01)00968-1
Verleg, P.A.W.E., Dijkhuis, Jaap I. (2000) Generation–recombination noise studied in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 266. 232-236 doi:10.1016/s0022-3093(99)00827-3
Van der Voort, M, Rella, C.W, van der Meer, A.F.G, Akimov, A.V, Dijkhuis, J.I (2000) Ultrafast infrared experiments on Si–H vibrations in a-Si:H. Journal of Non-Crystalline Solids, 266. 180-184 doi:10.1016/s0022-3093(99)00809-1
Hattori, K, Musa, Y, Okamoto, H (2002) Tunneling-assisted thermalization and recombination of photocarriers in a-Si:H. Journal of Non-Crystalline Solids, 299. 546-550 doi:10.1016/s0022-3093(01)00966-8
van Veen, M.K, van Veenendaal, P.A.T.T, van der Werf, C.H.M, Rath, J.K, Schropp, R.E.I (2002) a-Si:H/poly-Si tandem cells deposited by hot-wire CVD. Journal of Non-Crystalline Solids, 299. 1194-1197 doi:10.1016/s0022-3093(01)01087-0
Shimakawa, K, Ganjoo, Ashtosh (2002) Photoconductivity of macroscopically inhomogeneous amorphous semiconductors: case example for a-Si:H. Journal of Non-Crystalline Solids, 299. 339-345 doi:10.1016/s0022-3093(01)01009-2
Della Corte, F.G, Pezzimenti, F (2002) Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency. Journal of Non-Crystalline Solids, 299. 1365-1369 doi:10.1016/s0022-3093(01)01101-2
Dewarrat, R, Robertson, J (2002) Binding and surface diffusion of SiH3 radicals on a growing a-Si:H surface. Journal of Non-Crystalline Solids, 299. 48-52 doi:10.1016/s0022-3093(01)00994-2
Biswas, R, Pan, B.C (2002) Defect kinetics in new model of metastability in a-Si:H. Journal of Non-Crystalline Solids, 299. 507-510 doi:10.1016/s0022-3093(01)00961-9
Shimizu, Satoshi, Stradins, Paul, Kondo, Michio, Matsuda, Akihisa (2002) Photocarrier capture properties in a-Si:H. Journal of Non-Crystalline Solids, 299. 466-470 doi:10.1016/s0022-3093(01)01198-x
 
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