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Della Corte, F.G, Pezzimenti, F (2002) Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency. Journal of Non-Crystalline Solids, 299. 1365-1369 doi:10.1016/s0022-3093(01)01101-2

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Reference TypeJournal (article/letter/editorial)
TitleDesign of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency
JournalJournal of Non-Crystalline Solids
AuthorsDella Corte, F.GAuthor
Pezzimenti, FAuthor
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)01101-2Search in ResearchGate
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Mindat Ref. ID640262Long-form Identifiermindat:1:5:640262:8
GUID0
Full ReferenceDella Corte, F.G, Pezzimenti, F (2002) Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency. Journal of Non-Crystalline Solids, 299. 1365-1369 doi:10.1016/s0022-3093(01)01101-2
Plain TextDella Corte, F.G, Pezzimenti, F (2002) Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency. Journal of Non-Crystalline Solids, 299. 1365-1369 doi:10.1016/s0022-3093(01)01101-2
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Della Corte, F.G, Polichetti, T, Rubino, A, Cocorullo, G (2000) Study of a-Si:H emitters for efficient carrier injection in GaAs bipolar devices. Journal of Non-Crystalline Solids, 266. 1049-1053 doi:10.1016/s0022-3093(00)00041-7
Della Corte, F.G, Cantore, F, Iodice, M, Rendina, I, Summonte, C (2002) Low-cost chip-integrable silicon-based all-optical infrared light micromodulator. Journal of Non-Crystalline Solids, 299. 1300-1303 doi:10.1016/s0022-3093(01)01094-8
Cocorullo, G, Della Corte, F.G, Moretti, L, Rendina, I, Rubino, A (2002) Measurement of the thermo-optic coefficient of a-Si:H at the wavelength of 1500 nm from room temperature to 200 °C. Journal of Non-Crystalline Solids, 299. 310-313 doi:10.1016/s0022-3093(01)01192-9
Balberg, I (2002) Phototransport spectroscopy of a-Si:H and μc-Si:H. Journal of Non-Crystalline Solids, 299. 531-535 doi:10.1016/s0022-3093(01)00968-1
Bakker, J.P.R, van der Horst, B.J, Dijkhuis, J.I (2002) Simulations of generation–recombination noise of n–i–n a-Si:H devices using AMPS-1D. Journal of Non-Crystalline Solids, 299. 1256-1260 doi:10.1016/s0022-3093(01)01091-2
Zollondz, J.-H., Reynolds, S., Main, C., Smirnov, V., Zrinscak, I. (2002) The influence of defects on response speed of high gain two-beam photogating in a-Si:H PIN structures. Journal of Non-Crystalline Solids, 299. 594-598 doi:10.1016/s0022-3093(01)01204-2
Shimakawa, K, Ganjoo, Ashtosh (2002) Photoconductivity of macroscopically inhomogeneous amorphous semiconductors: case example for a-Si:H. Journal of Non-Crystalline Solids, 299. 339-345 doi:10.1016/s0022-3093(01)01009-2
Cocorullo, G, della Corte, F.G, de Rosa, R, Rendina, I, Rubino, A, Terzini, E (1998) a-Si:H/a-SiC:H waveguides and modulators for low-cost silicon-integrated optoelectronics. Journal of Non-Crystalline Solids, 227. 1118-1122 doi:10.1016/s0022-3093(98)00290-7
Dewarrat, R, Robertson, J (2002) Binding and surface diffusion of SiH3 radicals on a growing a-Si:H surface. Journal of Non-Crystalline Solids, 299. 48-52 doi:10.1016/s0022-3093(01)00994-2
Su, T., Plachy, Robin, Taylor, P.C., Hari, P. (2002) NMR probe of band tail states in a-Si:H. Journal of Non-Crystalline Solids, 299. 589-593 doi:10.1016/s0022-3093(01)01203-0
Biswas, R, Pan, B.C (2002) Defect kinetics in new model of metastability in a-Si:H. Journal of Non-Crystalline Solids, 299. 507-510 doi:10.1016/s0022-3093(01)00961-9
 
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