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Zollondz, J.-H., Reynolds, S., Main, C., Smirnov, V., Zrinscak, I. (2002) The influence of defects on response speed of high gain two-beam photogating in a-Si:H PIN structures. Journal of Non-Crystalline Solids, 299. 594-598 doi:10.1016/s0022-3093(01)01204-2

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of defects on response speed of high gain two-beam photogating in a-Si:H PIN structures
JournalJournal of Non-Crystalline Solids
AuthorsZollondz, J.-H.Author
Reynolds, S.Author
Main, C.Author
Smirnov, V.Author
Zrinscak, I.Author
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)01204-2Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID640377Long-form Identifiermindat:1:5:640377:9
GUID0
Full ReferenceZollondz, J.-H., Reynolds, S., Main, C., Smirnov, V., Zrinscak, I. (2002) The influence of defects on response speed of high gain two-beam photogating in a-Si:H PIN structures. Journal of Non-Crystalline Solids, 299. 594-598 doi:10.1016/s0022-3093(01)01204-2
Plain TextZollondz, J.-H., Reynolds, S., Main, C., Smirnov, V., Zrinscak, I. (2002) The influence of defects on response speed of high gain two-beam photogating in a-Si:H PIN structures. Journal of Non-Crystalline Solids, 299. 594-598 doi:10.1016/s0022-3093(01)01204-2
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Balberg, I (2002) Phototransport spectroscopy of a-Si:H and μc-Si:H. Journal of Non-Crystalline Solids, 299. 531-535 doi:10.1016/s0022-3093(01)00968-1
Brüggemann, R., Kleider, J.P., Bronner, W., Zrinscak, I. (2002) Influence of electron and proton irradiation on the electronic properties of microcrystalline silicon. Journal of Non-Crystalline Solids, 299. 632-636 doi:10.1016/s0022-3093(01)00971-1
Gao, W., Main, C., Reynolds, S., Brüggemann, R., Zollondz, J.H., Gibson, R.A.G. (1996) Evaluation of the DICE analysis method for a-Si:H p-i-n devices. Journal of Non-Crystalline Solids, 198. 1221-1225 doi:10.1016/0022-3093(96)00116-0
Main, C (2002) Interpretation of photocurrent transients in amorphous semiconductors. Journal of Non-Crystalline Solids, 299. 525-530 doi:10.1016/s0022-3093(01)00962-0
Dewarrat, R, Robertson, J (2002) Binding and surface diffusion of SiH3 radicals on a growing a-Si:H surface. Journal of Non-Crystalline Solids, 299. 48-52 doi:10.1016/s0022-3093(01)00994-2
Gueorguieva, M.J, Main, C, Reynolds, S, Brüggemann, R, Longeaud, C (2002) Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopy. Journal of Non-Crystalline Solids, 299. 541-545 doi:10.1016/s0022-3093(01)00967-x
Roy, D, Longeaud, C, Saadane, O (2002) Influence of light-soaking and annealing on the microstructure of a-Si:H deposited at 423 K. Journal of Non-Crystalline Solids, 299. 511-515 doi:10.1016/s0022-3093(01)01021-3
Della Corte, F.G, Pezzimenti, F (2002) Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency. Journal of Non-Crystalline Solids, 299. 1365-1369 doi:10.1016/s0022-3093(01)01101-2
Oheda, Hidetoshi (2002) Spectral dependence of vibrational lifetime of Si–H stretching band in a-Si:H. Journal of Non-Crystalline Solids, 299. 210-214 doi:10.1016/s0022-3093(01)00949-8
Hattori, K, Musa, Y, Okamoto, H (2002) Tunneling-assisted thermalization and recombination of photocarriers in a-Si:H. Journal of Non-Crystalline Solids, 299. 546-550 doi:10.1016/s0022-3093(01)00966-8
Biswas, R, Pan, B.C (2002) Defect kinetics in new model of metastability in a-Si:H. Journal of Non-Crystalline Solids, 299. 507-510 doi:10.1016/s0022-3093(01)00961-9
 
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