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Kyutt, R. N., Shcheglov, M. P. (2018) Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers. Technical Physics Letters, 44. 548-550 doi:10.1134/s106378501806024x

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Reference TypeJournal (article/letter/editorial)
TitleReciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers
JournalTechnical Physics Letters
AuthorsKyutt, R. N.Author
Shcheglov, M. P.Author
Year2018 (June)Volume44
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s106378501806024xSearch in ResearchGate
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Mindat Ref. ID6209950Long-form Identifiermindat:1:5:6209950:1
GUID0
Full ReferenceKyutt, R. N., Shcheglov, M. P. (2018) Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers. Technical Physics Letters, 44. 548-550 doi:10.1134/s106378501806024x
Plain TextKyutt, R. N., Shcheglov, M. P. (2018) Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers. Technical Physics Letters, 44. 548-550 doi:10.1134/s106378501806024x
In(n.d.) Technical Physics Letters Vol. 44. Pleiades Publishing Ltd

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Kyutt, R. N. (2018) Intensity Distribution of the Three-Wave Diffraction from Dislocation Epitaxial Layers in the Reciprocal Space. Physics of the Solid State, 60. 695-699 doi:10.1134/s1063783418040182
Kyutt, R. N., Ratnikov, V. V., Mosina, G. N., Shcheglov, M. P. (1999) Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements. Physics of the Solid State, 41. 25-31 doi:10.1134/1.1130722
Kyutt, R. N., Ivanov, S. V. (2014) The structural state of epitaxial ZnO layers assessed by measuring the integral intensity of three- and two-beam X-ray diffraction. Technical Physics Letters, 40. 894-896 doi:10.1134/s106378501410023x
Kyutt, R. N., Shcheglov, M. P., Davydov, V. Yu., Usikov, A. S. (2004) Deformation of AlGaN/GaN superlattice layers according to x-ray diffraction data. Physics of the Solid State, 46. 364-370 doi:10.1134/1.1649438
Kyutt, R. T. (2017) Defect structure of epitaxial layers of III nitrides as determined by analyzing the shape of X-ray diffraction peaks. Technical Physics, 62 (4). 598-603 doi:10.1134/s1063784217040144
Kyutt, R. N. (2011) Three-wave diffraction in damaged epitaxial layers with a wurtzite structure. Technical Physics, 56 (5). 668-675 doi:10.1134/s1063784211050203
Loshkarev, I. D., Vasilenko, A. P., Trukhanov, E. M., Kolesnikov, A. V., Petrushkov, M. O., Putyato, M. A. (2018) X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter. Technical Physics Letters, 44. 562-565 doi:10.1134/s106378501807009x
Shul’pina, I. L., Kyutt, R. N., Ratnikov, V. V., Prokhorov, I. A., Bezbakh, I. Zh., Shcheglov, M. P. (2010) X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals. Technical Physics, 55 (4). 537-545 doi:10.1134/s1063784210040183
Kyutt, R. N. (2010) Studying defect structure of GaN epilayers by means of three-beam X-ray diffraction analysis. Technical Physics Letters, 36. 690-693 doi:10.1134/s1063785010080031
Kyutt, R. N. (2016) On the role of secondary extinction in the measurement of the integrated intensity of X-ray diffraction peaks and in the determination of the thickness of damaged epitaxial layers. Physics of the Solid State, 58. 1090-1097 doi:10.1134/s1063783416060287
Kyutt, R. N. (2012) Structural characterization of AlGaN/GaN superlattices by three-beam X-ray diffraction. Technical Physics Letters, 38. 38-41 doi:10.1134/s1063785012010075
 
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