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Zhilyaev, Yu. V., Rodin, S. N. (2010) Chloride vapor-phase epitaxy of gallium nitride at a reduced source temperature. Technical Physics Letters, 36. 397-399 doi:10.1134/s1063785010050020

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Reference TypeJournal (article/letter/editorial)
TitleChloride vapor-phase epitaxy of gallium nitride at a reduced source temperature
JournalTechnical Physics Letters
AuthorsZhilyaev, Yu. V.Author
Rodin, S. N.Author
Year2010 (May)Volume36
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785010050020Search in ResearchGate
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Mindat Ref. ID6207316Long-form Identifiermindat:1:5:6207316:9
GUID0
Full ReferenceZhilyaev, Yu. V., Rodin, S. N. (2010) Chloride vapor-phase epitaxy of gallium nitride at a reduced source temperature. Technical Physics Letters, 36. 397-399 doi:10.1134/s1063785010050020
Plain TextZhilyaev, Yu. V., Rodin, S. N. (2010) Chloride vapor-phase epitaxy of gallium nitride at a reduced source temperature. Technical Physics Letters, 36. 397-399 doi:10.1134/s1063785010050020
In(n.d.) Technical Physics Letters Vol. 36. Pleiades Publishing Ltd

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Aksyanov, I. G., Bessolov, V. N., Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Osipov, A. V., Rodin, S. N., Feoktistov, N. A., Sharofidinov, Sh., Shcheglov, M. P. (2008) Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer. Technical Physics Letters, 34. 479-482 doi:10.1134/s1063785008060084
Bessolov, V. N., Botnaryuk, V. M., Zhilyaev, Yu. V., Konenkova, E. V., Poletaev, N. K., Raevskiĭ, S. D., Rodin, S. N., Smirnov, S. L., Sharofidinov, Sh., Shcheglov, M. P., Park, Hee Seok, Koike, Masayoshi (2006) Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers. Technical Physics Letters, 32. 674-676 doi:10.1134/s1063785006080116
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Zhilyaev, Yu. V., Zelenin, V. V., Orlova, T. A., Panteleev, V. N., Poletaev, N. K., Rodin, S. N., Snytkina, S. A. (2015) The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system. Technical Physics Letters, 41. 476-478 doi:10.1134/s1063785015050314
Smirnov, S. A., Panteleev, V. N., Zhilyaev, Yu. V., Rodin, S. N., Segal, A. S., Makarov, Yu. N., Butashin, A. V. (2008) Growth of single-crystalline GaN layers in a horizontal reactor by chloride epitaxy. Technical Physics, 53 (12). 1602-1605 doi:10.1134/s1063784208120116
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Lundin, W. V. (2005) Influence of the Carrier Gas Composition on Metalorganic Vapor Phase Epitaxy of Gallium Nitride. Technical Physics Letters, 31. 293pp. doi:10.1134/1.1920375
Konstantinov, V. B., Babenko, V. A., Zhilyaev, Yu. V. (2003) Application of the holographic interferometer for modeling of processes in a vapor phase epitaxy reactor. Technical Physics Letters, 29. 521-522 doi:10.1134/1.1589578
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