Jibuti, Z. V., Dolidze, N. D., Sikhuashvili, N., Eristavi, G. L. (2004) The effect of neutron irradiation on the microhardness of gallium arsenide. Technical Physics Letters, 30. 730-731 doi:10.1134/1.1804578

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Reference Type	Journal (article/letter/editorial)
Title	The effect of neutron irradiation on the microhardness of gallium arsenide
Journal	Technical Physics Letters
Authors	Jibuti, Z. V.		Author
	Dolidze, N. D.		Author
	Sikhuashvili, N.		Author
	Eristavi, G. L.		Author
Year	2004 (September)	Volume	30
Publisher	Pleiades Publishing Ltd
DOI	doi:10.1134/1.1804578Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	6205484	Long-form Identifier	mindat:1:5:6205484:5
GUID	0
Full Reference	Jibuti, Z. V., Dolidze, N. D., Sikhuashvili, N., Eristavi, G. L. (2004) The effect of neutron irradiation on the microhardness of gallium arsenide. Technical Physics Letters, 30. 730-731 doi:10.1134/1.1804578
Plain Text	Jibuti, Z. V., Dolidze, N. D., Sikhuashvili, N., Eristavi, G. L. (2004) The effect of neutron irradiation on the microhardness of gallium arsenide. Technical Physics Letters, 30. 730-731 doi:10.1134/1.1804578
In	(n.d.) Technical Physics Letters Vol. 30. Pleiades Publishing Ltd

	Jibuti, Z. V., Dolidze, N. D., Tsekvava, B. E., Eristavi, G. L. (2003) The effect of neutron irradiation on the exciton absorption in gallium arsenide. Technical Physics Letters, 29. 540-541 doi:10.1134/1.1598542
	Jibuti, Z. V., Dolidze, N. D., Eristavi, G. L. (2008) Photostimulated relaxation of internal mechanical stresses in epitaxial SOS structures. Technical Physics, 53 (6). 808-810 doi:10.1134/s106378420806025x
	Dzhibuti, Z. V., Dolidze, N. D. (2001) On the properties of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide. Technical Physics Letters, 27. 1008-1009 doi:10.1134/1.1432330
	Dzhibuti, Z. V., Dolidze, N. D. (2000) On the possible spatial orientation of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide. Technical Physics Letters, 26. 789-790 doi:10.1134/1.1315495
	Avsarkisov, S. A., Jibuti, Z. V., Dolidze, N. D., Tsekvava, B. E. (2006) Laser stimulated low-temperature crystallization of amorphous silicon. Technical Physics Letters, 32. 259-261 doi:10.1134/s1063785006030254
	Bormontov, E. N., Levin, M. N., Gitlin, V. R., Men’shikova, T. G., Tatarintsev, A. A. (2004) The effect of irradiation on the characteristics of MOS transistors. Technical Physics Letters, 30. 385-388 doi:10.1134/1.1760863
	Laletin, V. M., Stognii, A. I., Novitskii, N. N., Poddubnaya, N. N. (2014) The magnetoelectric effect in structures based on metallized gallium arsenide substrates. Technical Physics Letters, 40. 969-971 doi:10.1134/s1063785014110078
	Botnaryuk, M. V., Zhilyaev, Yu. V., Orlova, T. A., Poletaev, N. K., Fedorov, L. M., Yusupova, Sh. A. (2004) Correlation between the electrical and luminescent properties of high-purity gallium arsenide. Technical Physics Letters, 30. 810-812 doi:10.1134/1.1813717
	Brudnyi, V. N., Budnitskii, D. L., Kolin, N. G., Malisova, E. V., Nikiforova, M. P. (1991) Effect of electron irradiation on the properties of germanium-doped gallium arsenide. Soviet Physics Journal, 34. 348-352 doi:10.1007/bf00898102
	Dmitruk, N. L., Borkovskaya, O. Yu., Konakova, R. V., Mamontova, I. B., Mamykin, S. V., Voitsikhovskiy, D. I. (2002) Effect of gamma irradiation on photoconversion characteristics of metal/gallium arsenide barrier structures with textured interface. Technical Physics, 47 (6). 698-702 doi:10.1134/1.1486191
	Kagadei, V. A., Lilenko, Yu. V., Shirokova, L. S., Proskurovskii, D. I. (2000) The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures. Technical Physics Letters, 26. 269-271 doi:10.1134/1.1262814

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Jibuti, Z. V., Dolidze, N. D., Sikhuashvili, N., Eristavi, G. L. (2004) The effect of neutron irradiation on the microhardness of gallium arsenide. Technical Physics Letters, 30. 730-731 doi:10.1134/1.1804578

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