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Dzhibuti, Z. V., Dolidze, N. D. (2000) On the possible spatial orientation of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide. Technical Physics Letters, 26. 789-790 doi:10.1134/1.1315495

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Reference TypeJournal (article/letter/editorial)
TitleOn the possible spatial orientation of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide
JournalTechnical Physics Letters
AuthorsDzhibuti, Z. V.Author
Dolidze, N. D.Author
Year2000 (September)Volume26
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1315495Search in ResearchGate
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Mindat Ref. ID6204092Long-form Identifiermindat:1:5:6204092:1
GUID0
Full ReferenceDzhibuti, Z. V., Dolidze, N. D. (2000) On the possible spatial orientation of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide. Technical Physics Letters, 26. 789-790 doi:10.1134/1.1315495
Plain TextDzhibuti, Z. V., Dolidze, N. D. (2000) On the possible spatial orientation of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide. Technical Physics Letters, 26. 789-790 doi:10.1134/1.1315495
In(n.d.) Technical Physics Letters Vol. 26. Pleiades Publishing Ltd

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Dzhibuti, Z. V., Dolidze, N. D. (2001) On the properties of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide. Technical Physics Letters, 27. 1008-1009 doi:10.1134/1.1432330
Jibuti, Z. V., Dolidze, N. D., Tsekvava, B. E., Eristavi, G. L. (2003) The effect of neutron irradiation on the exciton absorption in gallium arsenide. Technical Physics Letters, 29. 540-541 doi:10.1134/1.1598542
Dzhibuti, Z. V., Dolidze, N. D., Narsiya, G. Sh., Éristavi, G. L. (1997) Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide. Technical Physics Letters, 23. 746-747 doi:10.1134/1.1261786
Jibuti, Z. V., Dolidze, N. D., Sikhuashvili, N., Eristavi, G. L. (2004) The effect of neutron irradiation on the microhardness of gallium arsenide. Technical Physics Letters, 30. 730-731 doi:10.1134/1.1804578
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Bugaev, A. A., Nikitin, S. E. (2000) Absorption band saturation in the near-IR spectrum of molybdenum blue. Technical Physics Letters, 26. 634-636 doi:10.1134/1.1262938
Lisachenko, A. A., Glebovskii, A. A. (2000) Laser-induced surface decomposition of Al2O3 excited in the V-center absorption band. Technical Physics Letters, 26. 311-314 doi:10.1134/1.1262827
Anisimov, V. V., Demkin, V. P., Kvint, I. A., Mel’nichuk, S. V., Semukhin, B. S. (2000) Hydrogen microdoping of the near-surface layers of gallium arsenide. Technical Physics Letters, 26. 284-287 doi:10.1134/1.1262819
Randoshkin, V. V., Vasil’eva, N. V., Plotnichenko, V. G., Pyrkov, Yu. N. (2000) Optical absorption in cobalt-containing epitaxial films of gadolinium gallium garnet. Technical Physics Letters, 26. 1053-1054 doi:10.1134/1.1337250
Amosov, V. N., Krasil’nikov, A. V., Tugarinov, S. N., Frunze, V. V., Tsutskikh, A. Yu. (2000) Annealing of the radiation-induced defects in natural diamond. Technical Physics Letters, 26. 464-466 doi:10.1134/1.1262878
Ermolovich, I. B., Konakova, R. V., Milenin, V. V., Senkevich, A. I. (1999) Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide. Technical Physics Letters, 25. 789-791 doi:10.1134/1.1262636
 
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