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Jibuti, Z. V., Dolidze, N. D., Tsekvava, B. E., Eristavi, G. L. (2003) The effect of neutron irradiation on the exciton absorption in gallium arsenide. Technical Physics Letters, 29. 540-541 doi:10.1134/1.1598542

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of neutron irradiation on the exciton absorption in gallium arsenide
JournalTechnical Physics Letters
AuthorsJibuti, Z. V.Author
Dolidze, N. D.Author
Tsekvava, B. E.Author
Eristavi, G. L.Author
Year2003 (July)Volume29
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1598542Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6205083Long-form Identifiermindat:1:5:6205083:0
GUID0
Full ReferenceJibuti, Z. V., Dolidze, N. D., Tsekvava, B. E., Eristavi, G. L. (2003) The effect of neutron irradiation on the exciton absorption in gallium arsenide. Technical Physics Letters, 29. 540-541 doi:10.1134/1.1598542
Plain TextJibuti, Z. V., Dolidze, N. D., Tsekvava, B. E., Eristavi, G. L. (2003) The effect of neutron irradiation on the exciton absorption in gallium arsenide. Technical Physics Letters, 29. 540-541 doi:10.1134/1.1598542
In(n.d.) Technical Physics Letters Vol. 29. Pleiades Publishing Ltd

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Jibuti, Z. V., Dolidze, N. D., Sikhuashvili, N., Eristavi, G. L. (2004) The effect of neutron irradiation on the microhardness of gallium arsenide. Technical Physics Letters, 30. 730-731 doi:10.1134/1.1804578
Avsarkisov, S. A., Jibuti, Z. V., Dolidze, N. D., Tsekvava, B. E. (2006) Laser stimulated low-temperature crystallization of amorphous silicon. Technical Physics Letters, 32. 259-261 doi:10.1134/s1063785006030254
Jibuti, Z. V., Dolidze, N. D., Eristavi, G. L. (2008) Photostimulated relaxation of internal mechanical stresses in epitaxial SOS structures. Technical Physics, 53 (6). 808-810 doi:10.1134/s106378420806025x
Dzhibuti, Z. V., Dolidze, N. D. (2001) On the properties of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide. Technical Physics Letters, 27. 1008-1009 doi:10.1134/1.1432330
Dzhibuti, Z. V., Dolidze, N. D. (2000) On the possible spatial orientation of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide. Technical Physics Letters, 26. 789-790 doi:10.1134/1.1315495
Kagadei, V. A., Nefyodtsev, E. V., Proskurovsky, D. I., Romanenko, S. V., Shirokova, L. S. (2003) The effect of hydrogenation on the sink breakdown voltage of transistors based on ion-doped gallium arsenide structures. Technical Physics Letters, 29. 12-15 doi:10.1134/1.1544334
Dolidze, N. D., Tsekvava, B. E. (2002) On the model of divacancies in germanium. Physics of the Solid State, 44. 2034-2038 doi:10.1134/1.1521452
Tikhov, S. V., Shobolov, E. L., Podol’skiy, V. V., Levichev, S. B. (2003) Effect of hydrogen on the photoelectric properties of palladium/anodic oxide/gallium arsenide Schottky diodes. Technical Physics, 48 (2). 219-224 doi:10.1134/1.1553564
Zaveryukhina, N. N., Zaveryukhina, E. B., Zaveryukhin, B. N. (2007) Acoustostimulated change in the optical absorption coefficient of gallium arsenide in the 0.81–1.77 μm wavelength range. Technical Physics Letters, 33. 361-364 doi:10.1134/s106378500705001x
Dmitruk, N. L., Borkovskaya, O. Yu., Konakova, R. V., Mamontova, I. B., Mamykin, S. V., Voitsikhovskiy, D. I. (2002) Effect of gamma irradiation on photoconversion characteristics of metal/gallium arsenide barrier structures with textured interface. Technical Physics, 47 (6). 698-702 doi:10.1134/1.1486191
Kagadei, V. A., Lilenko, Yu. V., Shirokova, L. S., Proskurovskii, D. I. (2000) The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures. Technical Physics Letters, 26. 269-271 doi:10.1134/1.1262814
 
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