Tsyrlin, G. É., Polyakov, N. K., Egorov, V. A., Petrov, V. N., Volovik, B. V., Sizov, D. S., Tsatsul’nikov, A. F., Ustinov, V. M. (2000) Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm. Technical Physics Letters, 26. 423-425 doi:10.1134/1.1262866

See Also

These are possibly similar items as determined by title/reference text matching only.

	Egorov, V. A., Petrov, V. N., Polyakov, N. K., Tsyrlin, G. É., Volovik, B. V., Zhukov, A. E., Ustinov, V. M. (2000) Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3–1.4 μm wavelength range. Technical Physics Letters, 26. 631-633 doi:10.1134/1.1262937
	Tonkikh, A. A., Egorov, V. A., Polyakov, N. K., Tsyrlin, G. É., Volovik, B. V., Cherkashin, N. A., Ustinov, V. M. (2002) Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures. Technical Physics Letters, 28. 191-193 doi:10.1134/1.1467272
	Tonkikh, A. A., Egorov, V. A., Polyakov, N. K., Cirlin, G. E., Kryzhanovskaya, N. V., Sizov, D. S., Ustinov, V. M. (2002) Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells. Technical Physics Letters, 28. 434-436 doi:10.1134/1.1482759
	Odnoblyudov, V. A., Egorov, A. Yu., Kryzhanovskaya, N. V., Gladyshev, A. G., Mamutin, V. V., Tsatsul’nikov, A. F., Ustinov, V. M. (2002) Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates. Technical Physics Letters, 28. 964-966 doi:10.1134/1.1526898
	Zhukov, A. E., Volovik, B. V., Mikhrin, S. S., Maleev, N. A., Tsatsul’nikov, A. F., Nikitina, E. V., Kayander, I. N., Ustinov, V. M., Ledentsov, N. N. (2001) 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots. Technical Physics Letters, 27. 734-736 doi:10.1134/1.1405243
	Tsyrlin, G. É., Samsonenko, Yu. B., Petrov, V. N., Polyakov, N. K., Egorov, V. A., Masalov, S. A., Gorbenko, O. M., Golubok, A. O., Soshnikov, I. P., Ustinov, V. M. (2000) Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface. Technical Physics Letters, 26. 781-784 doi:10.1134/1.1315492
	Ustinov, V. M., Kovsh, A. R., Zhukov, A. E., Egorov, A. Yu., Ledentsov, N. N., Lunev, A. V., Shernyakov, Yu. M., Maksimov, M. V., Tsatsul’nikov, A. F., Volovik, B. V., Kop’ev, P. S., Alferov, Zh. I. (1998) Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm. Technical Physics Letters, 24. 22-23 doi:10.1134/1.1261977
	Volovik, B. V., Tsatsul’nikov, A. F., Ledentsov, N. N., Maksimov, M. V., Sakharov, A. V., Egorov, A. Yu., Zhukov, A. E., Kovsh, A. R., Ustinov, V. M., Kop’ev, P. S., Alferov, Zh. I., Kozin, I. É., Belousov, M. V., Bimberg, D. (1998) Lasing in submonolayer InAs/AlGaAs structures without external optical confinement. Technical Physics Letters, 24. 567-569 doi:10.1134/1.1262198
	Tonkikh, A. A., Cirlin, G. E., Dubrovskii, V. G., Samsonenko, Yu. B., Polyakov, N. K., Egorov, V. A., Gladyshev, A. G., Kryzhanovskaya, N. V., Ustinov, V. M. (2003) Quantum dots in InAs layers of subcritical thickness on GaAs(100). Technical Physics Letters, 29. 691-693 doi:10.1134/1.1606790
	Ustinov, V. M., Maleev, N. A., Zhukov, A. E., Kovsh, A. R., Egorov, A. Yu., Lunev, A. V., Volovik, B. V., Krestnikov, I. L., Musikhin, Yu. G., Bert, N. A., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D. (1999) InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm. Applied Physics Letters, 74 (19). 2815-2817 doi:10.1063/1.124023
	Egorov, V. A., Tsyrlin, G. É. (2000) Numerical simulation of some peculiarities of the formation of multilayer structures with quantum dots by means of molecular beam epitaxy. Technical Physics Letters, 26. 220-222 doi:10.1134/1.1262797