Odnoblyudov, V. A., Egorov, A. Yu., Kryzhanovskaya, N. V., Gladyshev, A. G., Mamutin, V. V., Tsatsul’nikov, A. F., Ustinov, V. M. (2002) Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates. Technical Physics Letters, 28. 964-966 doi:10.1134/1.1526898

See Also

These are possibly similar items as determined by title/reference text matching only.

	Mamutin, V. V., Bondarenko, O. V., Egorov, A. Yu., Kryzhanovskaya, N. V., Shernyakov, Yu. M., Ustinov, V. M. (2006) Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range. Technical Physics Letters, 32. 229-231 doi:10.1134/s1063785006030163
	Mamutin, V. V., Bondarenko, O. V., Vasil’ev, A. P., Gladyshev, A. G., Egorov, A. Yu., Kryzhanovskaya, N. V., Mikhrin, V. S., Ustinov, V. M. (2007) Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices. Technical Physics Letters, 33. 384-387 doi:10.1134/s1063785007050070
	Tonkikh, A. A., Egorov, V. A., Polyakov, N. K., Cirlin, G. E., Kryzhanovskaya, N. V., Sizov, D. S., Ustinov, V. M. (2002) Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells. Technical Physics Letters, 28. 434-436 doi:10.1134/1.1482759
	Egorov, A. Yu., Zhukov, A. E., Kovsh, A. R., Ustinov, V. M., Mamutin, V. V., Ivanov, S. V., Zhmerik, V. N., Tsatsul’nikov, A. F., Bedarev, D. A., Kop’ev, P. S. (1998) GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy. Technical Physics Letters, 24. 942-944 doi:10.1134/1.1262326
	Tonkikh, A. A., Cirlin, G. E., Dubrovskii, V. G., Samsonenko, Yu. B., Polyakov, N. K., Egorov, V. A., Gladyshev, A. G., Kryzhanovskaya, N. V., Ustinov, V. M. (2003) Quantum dots in InAs layers of subcritical thickness on GaAs(100). Technical Physics Letters, 29. 691-693 doi:10.1134/1.1606790
	Tsyrlin, G. É., Polyakov, N. K., Egorov, V. A., Petrov, V. N., Volovik, B. V., Sizov, D. S., Tsatsul’nikov, A. F., Ustinov, V. M. (2000) Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm. Technical Physics Letters, 26. 423-425 doi:10.1134/1.1262866
	Odnoblyudov, V. A., Egorov, A. Yu., Kovsh, A. R., Mamutin, V. V., Nikitina, E. V., Shernyakov, Yu. M., Maksimov, M. V., Ustinov, V. M. (2003) Longwave generation in laser structures based on InGaAs(N) quantum wells on GaAs substrates. Technical Physics Letters, 29. 433-434 doi:10.1134/1.1579817
	Egorov, V. A., Petrov, V. N., Polyakov, N. K., Tsyrlin, G. É., Volovik, B. V., Zhukov, A. E., Ustinov, V. M. (2000) Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3–1.4 μm wavelength range. Technical Physics Letters, 26. 631-633 doi:10.1134/1.1262937
	Mamutin, V. V., Egorov, A. Yu., Kryzhanovskaya, N. V., Nadtochy, A. M., Payusov, A. S. (2008) Effect of structural design on the optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices. Technical Physics Letters, 34. 146-149 doi:10.1134/s1063785008020181
	Zhukov, A. E., Volovik, B. V., Mikhrin, S. S., Maleev, N. A., Tsatsul’nikov, A. F., Nikitina, E. V., Kayander, I. N., Ustinov, V. M., Ledentsov, N. N. (2001) 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots. Technical Physics Letters, 27. 734-736 doi:10.1134/1.1405243
	Ustinov, Victor M., Egorov, Anton Yu., Odnoblyudov, Vladimir A., Kryzhanovskaya, Natalya V., Musikhin, Yurii G., Tsatsul’nikov, Andrey F., Alferov, Zhores I. (2003) InAs/InGaAsN quantum dots emitting at 1.55μm grown by molecular beam epitaxy. Journal of Crystal Growth, 251 (1). 388-391 doi:10.1016/s0022-0248(02)02432-6