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Egorov, V. A., Tsyrlin, G. É. (2000) Numerical simulation of some peculiarities of the formation of multilayer structures with quantum dots by means of molecular beam epitaxy. Technical Physics Letters, 26. 220-222 doi:10.1134/1.1262797

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Reference TypeJournal (article/letter/editorial)
TitleNumerical simulation of some peculiarities of the formation of multilayer structures with quantum dots by means of molecular beam epitaxy
JournalTechnical Physics Letters
AuthorsEgorov, V. A.Author
Tsyrlin, G. É.Author
Year2000 (March)Volume26
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1262797Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6203903Long-form Identifiermindat:1:5:6203903:1
GUID0
Full ReferenceEgorov, V. A., Tsyrlin, G. É. (2000) Numerical simulation of some peculiarities of the formation of multilayer structures with quantum dots by means of molecular beam epitaxy. Technical Physics Letters, 26. 220-222 doi:10.1134/1.1262797
Plain TextEgorov, V. A., Tsyrlin, G. É. (2000) Numerical simulation of some peculiarities of the formation of multilayer structures with quantum dots by means of molecular beam epitaxy. Technical Physics Letters, 26. 220-222 doi:10.1134/1.1262797
In(n.d.) Technical Physics Letters Vol. 26. Pleiades Publishing Ltd

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Egorov, V. A., Petrov, V. N., Polyakov, N. K., Tsyrlin, G. É., Volovik, B. V., Zhukov, A. E., Ustinov, V. M. (2000) Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3–1.4 μm wavelength range. Technical Physics Letters, 26. 631-633 doi:10.1134/1.1262937
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Cirlin, G. É., Petrov, V. N., Masalov, S. A., Golubok, A. O., Ledentsov, N. N. (1997) Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy. Technical Physics Letters, 23. 893-894 doi:10.1134/1.1261923
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Smirnov, M. B., Talalaev, V. G., Novikov, B. V., Sarangov, S. V., Tsyrlin, G. É., Zakharov, N. D. (2007) Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots. Physics of the Solid State, 49. 1184-1190 doi:10.1134/s1063783407060261
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