Usikov, A. S., Tret’yakov, V. V., Lundin, V. V., Zadiranov, Yu. M., Pushnyi, B. V., Konnikov, S. G. (1999) Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence. Technical Physics Letters, 25. 253-256 doi:10.1134/1.1262443
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence | ||
| Journal | Technical Physics Letters | ||
| Authors | Usikov, A. S. | Author | |
| Tret’yakov, V. V. | Author | ||
| Lundin, V. V. | Author | ||
| Zadiranov, Yu. M. | Author | ||
| Pushnyi, B. V. | Author | ||
| Konnikov, S. G. | Author | ||
| Year | 1999 (April) | Volume | 25 |
| Publisher | Pleiades Publishing Ltd | ||
| DOI | doi:10.1134/1.1262443Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6203555 | Long-form Identifier | mindat:1:5:6203555:8 |
| GUID | 0 | ||
| Full Reference | Usikov, A. S., Tret’yakov, V. V., Lundin, V. V., Zadiranov, Yu. M., Pushnyi, B. V., Konnikov, S. G. (1999) Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence. Technical Physics Letters, 25. 253-256 doi:10.1134/1.1262443 | ||
| Plain Text | Usikov, A. S., Tret’yakov, V. V., Lundin, V. V., Zadiranov, Yu. M., Pushnyi, B. V., Konnikov, S. G. (1999) Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence. Technical Physics Letters, 25. 253-256 doi:10.1134/1.1262443 | ||
| In | (n.d.) Technical Physics Letters Vol. 25. Pleiades Publishing Ltd | ||
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