Maksimov, M. V., Sakharov, A. V., Lundin, V. V., Usikov, A. S., Pushnyi, B. V., Krestnikov, I. L., Ledentsov, N. N., Kop’ev, P. S., Alferov, Zh. I., Rozum, V. P. (1997) Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure. Technical Physics Letters, 23. 597-599 doi:10.1134/1.1261764

See Also

These are possibly similar items as determined by title/reference text matching only.

	Krestnikov, I. L., Ledentsov, N. N., Maksimov, M. V., Sakharov, A. V., Ivanov, S. V., Sorokin, S. V., Tenishev, L. N., Kop’ev, P. S., Alferov, Zh. I. (1997) Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement. Technical Physics Letters, 23. 23-25 doi:10.1134/1.1261607
	Shernyakov, Yu. M., Egorov, A. Yu., Zhukov, A. E., Zaitsev, S. V., Kovsh, A. R., Krestnikov, I. L., Lunev, A. V., Ledentsov, N. N., Maksimov, M. V., Sakharov, A. V., Ustinov, V. M., Chen, Chao, Kop’ev, P. S., Alferov, Zh. I., Bimberg, D. (1997) Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W. Technical Physics Letters, 23. 149-150 doi:10.1134/1.1261567
	Krestnikov, I. L., Lundin, W. V., Sakharov, A. V., Semenov, V. A., Usikov, A. S., Tsatsul’nikov, A. F., Alferov, Zh. I., Ledentsov, N. N., Hoffmann, A., Bimberg, D. (1999) Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser. Applied Physics Letters, 75 (9). 1192-1194 doi:10.1063/1.124638
	Sakharov, A. V., Lundin, W. V., Krestnikov, I. L., Semenov, V. A., Usikov, A. S., Tsatsul’nikov, A. F., Musikhin, Yu. G., Baidakova, M. V., Alferov, Zh. I., Ledentsov, N. N., Hoffmann, A., Bimberg, D. (1999) Surface-mode lasing from stacked InGaN insertions in a GaN matrix. Applied Physics Letters, 74 (26). 3921-3923 doi:10.1063/1.124224
	Sakharov, A. V., Ivanov, S. V., Sorokin, S. V., Krestnikov, I. L., Volovik, B. V., Ledentsov, N. N., Kop’ev, P. S. (1997) Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement. Technical Physics Letters, 23. 305-306 doi:10.1134/1.1261822
	Krestnikov, I. L., Ledentsov, N. N., Hoffmann, A., Bimberg, D., Sakharov, A. V., Lundin, W. V., Tsatsul’nikov, A. F., Usikov, A. S., Alferov, Zh. I., Musikhin, Yu. G., Gerthsen, D. (2002) Quantum dot origin of luminescence in InGaN-GaN structures. Physical Review B, 66 (15) doi:10.1103/physrevb.66.155310
	Volovik, B. V., Tsatsul’nikov, A. F., Ledentsov, N. N., Maksimov, M. V., Sakharov, A. V., Egorov, A. Yu., Zhukov, A. E., Kovsh, A. R., Ustinov, V. M., Kop’ev, P. S., Alferov, Zh. I., Kozin, I. É., Belousov, M. V., Bimberg, D. (1998) Lasing in submonolayer InAs/AlGaAs structures without external optical confinement. Technical Physics Letters, 24. 567-569 doi:10.1134/1.1262198
	Vorob’ev, L. E., Firsov, D. A., Shalygin, V. A., Tulupenko, V. N., Shernyakov, Yu. M., Egorov, A. Yu., Zhukov, A. E., Kovsh, A. R., Kop’ev, P. S., Kochnev, I. V., Ledentsov, N. N., Maksimov, M. V., Ustinov, V. M., Alferov, Zh. I. (1998) Spontaneous long-wavelength interlevel emission in quantum-dot laser structures. Technical Physics Letters, 24. 590-592 doi:10.1134/1.1262208
	Ledentsov, N. N., Bimberg, D., Shernyakov, Yu. M., Kochnev, V., Maximov, M. V., Sakharov, A. V., Krestnikov, I. L., Egorov, A. Yu., Zhukov, A. E., Tsatsul’nikov, A. F., Volovik, B. V., Ustinov, V. M., Kop’ev, P. S., Alferov, Zh. I., Kosogov, A. O., Werner, P. (1997) Properties of strained (In, Ga, Al)As lasers with laterally modulated active region. Applied Physics Letters, 70 (21). 2888-2890 doi:10.1063/1.119032
	Ustinov, V. M., Kovsh, A. R., Zhukov, A. E., Egorov, A. Yu., Ledentsov, N. N., Lunev, A. V., Shernyakov, Yu. M., Maksimov, M. V., Tsatsul’nikov, A. F., Volovik, B. V., Kop’ev, P. S., Alferov, Zh. I. (1998) Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm. Technical Physics Letters, 24. 22-23 doi:10.1134/1.1261977
	Shernyakov, Yu. M., Egorov, A. Yu., Volovik, B. V., Zhukov, A. E., Kovsh, A. R., Lunev, A. V., Ledentsov, N. N., Maksimov, M. V., Sakharov, A. V., Ustinov, V. M., Zhao, Zhen, Kop’ev, P. S., Alferov, Zh. I., Bimberg, D. (1998) Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region. Technical Physics Letters, 24. 351-353 doi:10.1134/1.1262118