Sakharov, A. V., Lundin, W. V., Krestnikov, I. L., Semenov, V. A., Usikov, A. S., Tsatsul’nikov, A. F., Musikhin, Yu. G., Baidakova, M. V., Alferov, Zh. I., Ledentsov, N. N., Hoffmann, A., Bimberg, D. (1999) Surface-mode lasing from stacked InGaN insertions in a GaN matrix. Applied Physics Letters, 74 (26). 3921-3923 doi:10.1063/1.124224

See Also

These are possibly similar items as determined by title/reference text matching only.

	Krestnikov, I. L., Lundin, W. V., Sakharov, A. V., Semenov, V. A., Usikov, A. S., Tsatsul’nikov, A. F., Alferov, Zh. I., Ledentsov, N. N., Hoffmann, A., Bimberg, D. (1999) Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser. Applied Physics Letters, 75 (9). 1192-1194 doi:10.1063/1.124638
	Krestnikov, I. L., Ledentsov, N. N., Hoffmann, A., Bimberg, D., Sakharov, A. V., Lundin, W. V., Tsatsul’nikov, A. F., Usikov, A. S., Alferov, Zh. I., Musikhin, Yu. G., Gerthsen, D. (2002) Quantum dot origin of luminescence in InGaN-GaN structures. Physical Review B, 66 (15) doi:10.1103/physrevb.66.155310
	Musikhin, Yu. G., Gerthsen, D., Bedarev, D. A., Bert, N. A., Lundin, W. V., Tsatsul’nikov, A. F., Sakharov, A. V., Usikov, A. S., Alferov, Zh. I., Krestnikov, I. L., Ledentsov, N. N., Hoffmann, A., Bimberg, D. (2002) Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures. Applied Physics Letters, 80 (12). 2099-2101 doi:10.1063/1.1462868
	Sakharov, A. V., Lundin, V. V., Semenov, V. A., Usikov, A. S., Ledentsov, N. N., Tsatsul’nikov, A. F., Baidakova, M. V. (1999) Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures. Technical Physics Letters, 25. 462-465 doi:10.1134/1.1262517
	Ledentsov, N. N., Tsatsul’nikov, A. F., Egorov, A. Yu., Kop’ev, P. S., Kovsh, A. R., Maximov, M. V., Ustinov, V. M., Volovik, B. V., Zhukov, A. E., Alferov, Zh. I., Krestnikov, I. L., Bimberg, D., Hoffmann, A. (1999) Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices. Applied Physics Letters, 74 (2). 161-163 doi:10.1063/1.123281
	Maksimov, M. V., Sakharov, A. V., Lundin, V. V., Usikov, A. S., Pushnyi, B. V., Krestnikov, I. L., Ledentsov, N. N., Kop’ev, P. S., Alferov, Zh. I., Rozum, V. P. (1997) Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure. Technical Physics Letters, 23. 597-599 doi:10.1134/1.1261764
	Sakharov, A.V., Lundin, W.V., Krestnikov, I.L., Semenov, V.A., Usikov, A.S., Tsatsulnikov, A.F., Musikhin, Yu.G., Baidakova, M.V., Alferov, Zh.I., Ledentsov, N.N., Holst, J., Hoffmann, A., Bimberg, D., Soshnikov, I.P., Gerthsen, D. (1999) Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix. physica status solidi (b), 216 (1). 435-440 doi:10.1002/(sici)1521-3951(199911)216:1<435::aid-pssb435>3.0.co;2-o
	Ledentsov, N. N., Bimberg, D., Shernyakov, Yu. M., Kochnev, V., Maximov, M. V., Sakharov, A. V., Krestnikov, I. L., Egorov, A. Yu., Zhukov, A. E., Tsatsul’nikov, A. F., Volovik, B. V., Ustinov, V. M., Kop’ev, P. S., Alferov, Zh. I., Kosogov, A. O., Werner, P. (1997) Properties of strained (In, Ga, Al)As lasers with laterally modulated active region. Applied Physics Letters, 70 (21). 2888-2890 doi:10.1063/1.119032
	Ustinov, V. M., Maleev, N. A., Zhukov, A. E., Kovsh, A. R., Egorov, A. Yu., Lunev, A. V., Volovik, B. V., Krestnikov, I. L., Musikhin, Yu. G., Bert, N. A., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D. (1999) InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm. Applied Physics Letters, 74 (19). 2815-2817 doi:10.1063/1.124023
	Zhukov, A. E., Kovsh, A. R., Maleev, N. A., Mikhrin, S. S., Ustinov, V. M., Tsatsul’nikov, A. F., Maximov, M. V., Volovik, B. V., Bedarev, D. A., Shernyakov, Yu. M., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D. (1999) Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates. Applied Physics Letters, 75 (13). 1926-1928 doi:10.1063/1.124873
	Volovik, B. V., Tsatsul’nikov, A. F., Ledentsov, N. N., Maksimov, M. V., Sakharov, A. V., Egorov, A. Yu., Zhukov, A. E., Kovsh, A. R., Ustinov, V. M., Kop’ev, P. S., Alferov, Zh. I., Kozin, I. É., Belousov, M. V., Bimberg, D. (1998) Lasing in submonolayer InAs/AlGaAs structures without external optical confinement. Technical Physics Letters, 24. 567-569 doi:10.1134/1.1262198