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Sidorov, V. G., Drizhuk, A. G., Shagalov, M. D., Sidorov, D. V., Usikov, A. S. (1999) Enhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching. Technical Physics Letters, 25. 65-66 doi:10.1134/1.1262358

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching
JournalTechnical Physics Letters
AuthorsSidorov, V. G.Author
Drizhuk, A. G.Author
Shagalov, M. D.Author
Sidorov, D. V.Author
Usikov, A. S.Author
Year1999 (January)Volume25
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1262358Search in ResearchGate
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Mindat Ref. ID6203377Long-form Identifiermindat:1:5:6203377:2
GUID0
Full ReferenceSidorov, V. G., Drizhuk, A. G., Shagalov, M. D., Sidorov, D. V., Usikov, A. S. (1999) Enhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching. Technical Physics Letters, 25. 65-66 doi:10.1134/1.1262358
Plain TextSidorov, V. G., Drizhuk, A. G., Shagalov, M. D., Sidorov, D. V., Usikov, A. S. (1999) Enhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching. Technical Physics Letters, 25. 65-66 doi:10.1134/1.1262358
In(n.d.) Technical Physics Letters Vol. 25. Pleiades Publishing Ltd

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Drizhuk, A. G., Sidorov, V. G., Sidorov, D. V., Shagalov, M. D. (1997) ZnTe-GaN heterostructure switching device. Technical Physics Letters, 23. 809-810 doi:10.1134/1.1261810
Drizhuk, A. G., Sidorov, V. G., Sidorov, D. V., Shagalov, M. D. (1997) CdS-GaN heterostructure photodetector with switching and memory. Technical Physics Letters, 23. 807-808 doi:10.1134/1.1261809
Sidorov, V. G., Drizhuk, A. G., Sidorov, D. V. (1997) Efficiency and reliability of metal-insulator-semiconductor radiative structures based on broad-band semiconductors with unipolar conductivity. Technical Physics Letters, 23. 825-827 doi:10.1134/1.1261897
Mynbaev, K. D., Bazhenov, N. L., Ivanov-Omskiĭ, V. I., Smirnov, V. A., Yakushev, M. V., Sorochkin, A. V., Varavin, V. S., Mikhailov, N. N., Sidorov, G. Yu., Dvoretsky, S. A., Sidorov, Yu. G. (2010) Photoluminescence of CdHgTe epilayers grown on silicon substrates. Technical Physics Letters, 36. 1085-1088 doi:10.1134/s1063785010120060
Shagalov, M. D., Drizhuk, A. G. (1980) Investigation of defects in light-emitting GaN structures. Journal of Applied Spectroscopy, 32. 390-393 doi:10.1007/bf00611022
Usikov, A. S., Tret’yakov, V. V., Lundin, V. V., Zadiranov, Yu. M., Pushnyi, B. V., Konnikov, S. G. (1999) Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence. Technical Physics Letters, 25. 253-256 doi:10.1134/1.1262443
Gorshkov, D. V., Sidorov, G. Yu., Sabinina, I. V., Sidorov, Yu. G., Marin, D. V., Yakushev, M. V. (2020) The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface. Technical Physics Letters, 46 (8) 741-744 doi:10.1134/s1063785020080064
Usikov, A. S., Helava, H., Nikiforov, A., Puzyk, M. V., Papchenko, B. P., Kovaleva, Yu. V., Makarov, Yu. N. (2016) Electrochemical etching of p–n-GaN/AlGaN photoelectrodes. Technical Physics Letters, 42. 482-485 doi:10.1134/s1063785016050151
Mynbaev, K. D., Bazhenov, N. L., Ivanov-Omskiĭ, V. I., Shilyaev, A. V., Varavin, V. S., Mikhailov, N. N., Dvoretsky, S. A., Sidorov, Yu. G. (2010) Photoluminescence of CdHgTe based nanoheterostructures. Technical Physics Letters, 36. 1099-1102 doi:10.1134/s1063785010120102
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Sakharov, A. V., Lundin, V. V., Semenov, V. A., Usikov, A. S., Ledentsov, N. N., Tsatsul’nikov, A. F., Baidakova, M. V. (1999) Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures. Technical Physics Letters, 25. 462-465 doi:10.1134/1.1262517
 
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