Steinman, E. A. (2005) Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon. Physics of the Solid State, 47. 5pp. doi:10.1134/1.1853432

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Reference Type	Journal (article/letter/editorial)
Title	Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon
Journal	Physics of the Solid State
Authors	Steinman, E. A.		Author
Year	2005	Volume	47
Publisher	Pleiades Publishing Ltd
DOI	doi:10.1134/1.1853432Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	6151983	Long-form Identifier	mindat:1:5:6151983:1
GUID	0
Full Reference	Steinman, E. A. (2005) Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon. Physics of the Solid State, 47. 5pp. doi:10.1134/1.1853432
Plain Text	Steinman, E. A. (2005) Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon. Physics of the Solid State, 47. 5pp. doi:10.1134/1.1853432
In	(n.d.) Physics of the Solid State Vol. 47. Pleiades Publishing Ltd

	*Tereshchenko, A. N., Steinman, E. A., Mazilkin, A. A. (2011) Effect of copper on dislocation luminescence centers in silicon. Physics of the Solid State, 53. 369-376 doi:10.1134/s1063783411020314*
	*Steinman, E. A. (2005) Influence of oxygen on the dislocation related luminescence centers in silicon. physica status solidi (c), 2 (6). 1837-1841 doi:10.1002/pssc.200460513*
	*Nedelko, S. (2005) Luminescence Centers Generated by Chromium Ions in Potassium–Aluminum (Indium) Diphosphates. Physics of the Solid State, 47. 1576pp. doi:10.1134/1.2014520*
	Timoshenko, V. Yu. (2005) Erbium Ion Luminescence of Silicon Nanocrystal Layers in a Silicon Dioxide Matrix Measured under Strong Optical Excitation. Physics of the Solid State, 47. 121pp. doi:10.1134/1.1853460
	*Dobrokhotov, É. V. (2005) Diffusion in Dislocation Germanium and the Model of a Liquid Dislocation Core. Physics of the Solid State, 47. 2257pp. doi:10.1134/1.2142887*
	*Potapov, A. S. (2005) Praseodymium Luminescence in Fluorides. Physics of the Solid State, 47. 1436pp. doi:10.1134/1.2014483*
	Kirm, M. (2005) Erratum: “VUV-Luminescence and Excitation Spectra of the Heavy Trivalent Rare-Earth Ions in Fluoride Matrices” [Physics of the Solid State 47, 1416 (2005)]. Physics of the Solid State, 47. 2203pp. doi:10.1134/1.2131168
	*Demidov, E. S. (2005) Properties of Magnesium Silicate Doped with Chromium in Porous Silicon. Physics of the Solid State, 47. 141pp. doi:10.1134/1.1853464*
	*Akimov, B. A. (2005) Recombination at Mixed-Valence Impurity Centers in PbTe(Ga) Epitaxial Layers. Physics of the Solid State, 47. 166pp. doi:10.1134/1.1853470*
	*Shevchenko, S. A., Izotov, A. N. (2003) Dislocation-induced photoluminescence in silicon crystals of various impurity composition. Physics of the Solid State, 45. 259-265 doi:10.1134/1.1553528*
	*Orlov, A. M. (2005) Redistribution of Dislocations in Silicon near Stress Concentrators. Physics of the Solid State, 47. 2049pp. doi:10.1134/1.2131143*

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Steinman, E. A. (2005) Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon. Physics of the Solid State, 47. 5pp. doi:10.1134/1.1853432

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