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Steinman, E. A. (2005) Influence of oxygen on the dislocation related luminescence centers in silicon. physica status solidi (c), 2 (6). 1837-1841 doi:10.1002/pssc.200460513

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of oxygen on the dislocation related luminescence centers in silicon
Journalphysica status solidi (c)
AuthorsSteinman, E. A.Author
Year2005 (April)Volume2
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200460513Search in ResearchGate
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Mindat Ref. ID5110093Long-form Identifiermindat:1:5:5110093:5
GUID0
Full ReferenceSteinman, E. A. (2005) Influence of oxygen on the dislocation related luminescence centers in silicon. physica status solidi (c), 2 (6). 1837-1841 doi:10.1002/pssc.200460513
Plain TextSteinman, E. A. (2005) Influence of oxygen on the dislocation related luminescence centers in silicon. physica status solidi (c), 2 (6). 1837-1841 doi:10.1002/pssc.200460513
In(2005, April) physica status solidi (c) Vol. 2 (6) Wiley

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Steinman, E. A., Tereshchenko, A. N. (2007) Influence of Cu contamination on dislocation related luminescence. physica status solidi (c), 4 (8). 3095-3099 doi:10.1002/pssc.200675490
Steinman, E. A., Kenyon, A. J., Tereshchenko, A. N. (2009) Time-resolved measurements of dislocation-related photoluminescence bands in silicon. physica status solidi (c), 6 (8). 1811-1816 doi:10.1002/pssc.200881461
Kveder, V., Badylevich, M., Schröter, W., Seibt, M., Steinman, E., Izotov, A. (2005) Silicon light-emitting diodes based on dislocation-related luminescence. physica status solidi (a), 202 (5). 901-910 doi:10.1002/pssa.200460512
Steinman, E. A. (2005) Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon. Physics of the Solid State, 47. 5pp. doi:10.1134/1.1853432
Shevchenko, S. A., Izotov, A. N. (2005) Dislocation photoluminescence in silicon crystals of various impurity contents. physica status solidi (c), 2 (6). 1827-1831 doi:10.1002/pssc.200460551
Londos, C. A., Potsidi, M. S., Emtsev, V. V. (2005) Effect of carbon on oxygen precipitation in Czochralski silicon. physica status solidi (c), 2 (6). 1963-1967 doi:10.1002/pssc.200460537
Kveder, V. V., Steinman, E. A. (1993) Influence of microwave heating on dislocation photoluminescence in plastically deformed germanium. physica status solidi (a), 138 (2). 625-630 doi:10.1002/pssa.2211380231
Kittler, M., Arguirov, T., Reiche, M., Krause, C., Mankovics, D. (2015) About dislocation and oxygen related luminescence of Si around 0.8 eV. physica status solidi (c), 12 (8). 1077-1080 doi:10.1002/pssc.201400231
Bourhis, Eric Le, Patriarche, Gilles (2009) Doping influence on the nanoindentation response of GaAs. physica status solidi (c), 6 (8). 1841-1846 doi:10.1002/pssc.200881445
Zorenko, Y., Gorbenko, V., Voloshinovskii, A., Stryganyuk, G., Nedilko, S., Degoda, V., Chukova, O. (2005) Luminescence of Sc-related centers in single crystalline films of Lu3Al5O12 garnet. physica status solidi (c), 2 (1). 105-108 doi:10.1002/pssc.200460122
Surdo, A.I., Kortov, V.S., Pustovarov, V.A., Yakovlev, V.Yu. (2005) UV luminescence of F-centers in aluminum oxide. physica status solidi (c), 2 (1). 527-530 doi:10.1002/pssc.200460225
 
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