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Londos, C. A., Potsidi, M. S., Emtsev, V. V. (2005) Effect of carbon on oxygen precipitation in Czochralski silicon. physica status solidi (c), 2 (6). 1963-1967 doi:10.1002/pssc.200460537

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Reference TypeJournal (article/letter/editorial)
TitleEffect of carbon on oxygen precipitation in Czochralski silicon
Journalphysica status solidi (c)
AuthorsLondos, C. A.Author
Potsidi, M. S.Author
Emtsev, V. V.Author
Year2005 (April)Volume2
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200460537Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5110128Long-form Identifiermindat:1:5:5110128:0
GUID0
Full ReferenceLondos, C. A., Potsidi, M. S., Emtsev, V. V. (2005) Effect of carbon on oxygen precipitation in Czochralski silicon. physica status solidi (c), 2 (6). 1963-1967 doi:10.1002/pssc.200460537
Plain TextLondos, C. A., Potsidi, M. S., Emtsev, V. V. (2005) Effect of carbon on oxygen precipitation in Czochralski silicon. physica status solidi (c), 2 (6). 1963-1967 doi:10.1002/pssc.200460537
In(2005, April) physica status solidi (c) Vol. 2 (6) Wiley

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Emtsev, V. V., Ammerlaan, C. A. J., Emtsev, V. V., Oganesyan, G. A., Misiuk, A., Surma, B., Bukowski, A., Londos, C. A., Potsidi, M. S. (2003) Oxygen agglomeration and formation of oxygen‐related thermal donors in heat‐treated silicon. Crystal Research and Technology, 38 (3) 394-398 doi:10.1002/crat.200310049
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Londos, C. A., Potsidi, M. S., Misiuk, A., Ratajczak, J., Emtsev, V. V., Antonaras, G. (2003) Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon. Journal of Applied Physics, 94 (7). 4363-4367 doi:10.1063/1.1602952
Londos, C. A., Andrianakis, A., Sgourou, E. N., Emtsev, V., Ohyama, H. (2010) Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon. Journal of Applied Physics, 107 (9). 93520pp. doi:10.1063/1.3391127
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