Hanamoto, K, Yoshimoto, H, Hosono, T, Hirai, A, Kido, Y, Nakayama, Y, Kaigawa, R (1998) Anomalous depth profile of implanted fluorine ions in SiO2/Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 140 (1). 124-128 doi:10.1016/s0168-583x(98)00107-4

See Also

These are possibly similar items as determined by title/reference text matching only.

	Hanamoto, K., Sasaki, M., Miyashita, T., Kido, Y., Nakayama, Y., Kawamoto, Y., Fujiwara, M., Kaigawa, R. (1998) Annealing effects on the hardening of electroless plated Ni–P layer by boron implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 145 (3). 391-394 doi:10.1016/s0168-583x(98)00419-4
	Hanamoto, K., Sasaki, M., Miyashita, T., Kido, Y., Nakayama, Y., Kawamoto, Y., Fujiwara, M., Kaigawa, R. (1997) Effect of fluorine ion implantation on the microstructure and microhardness of AISI 440C stainless steel. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 129 (2). 228-232 doi:10.1016/s0168-583x(97)00227-9
	Hosono, T., Hanamoto, K., Uéno, T., Kitabatake, I., Sasaki, M., Nakayama, Y., Nishino, S. (1999) Study on thin SiC layer split by hydrogen implantation in SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 149 (1). 67-71 doi:10.1016/s0168-583x(98)00623-5
	Yamamoto, Y, Ikeda, A, Yoneda, T, Kajiyama, K, Kido, Y (1999) Impact-parameter dependent stopping powers for MeV He ions in Si crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 153 (1). 10-14 doi:10.1016/s0168-583x(98)00982-3
	Hanamoto, K., Sasaki, M., Yoneda, T., Miyatani, K., Miki, H., Kaito, C., Nakayama, Y. (2000) Electrical and optical properties of carbon implanted In2O3 thin film. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 168 (3). 389-394 doi:10.1016/s0168-583x(99)01201-x
	Reutov, V.F. (1998) Methods of obtaining a uniform volume concentration of implanted ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 140 (3). 433-438 doi:10.1016/s0168-583x(98)00103-7
	Hanamoto, K, Sasaki, M, Miyatani, K, Kaito, C, Miki, H, Nakayama, Y (2001) Electrical and optical properties of boron and nitrogen implanted In2O3 thin films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 173 (3). 287-291 doi:10.1016/s0168-583x(00)00334-7
	Ofuchi, H, Imaizumi, Y, Sugawara, H, Fujioka, H, Oshima, M, Takeda, Y (2003) Fluorescence XAFS study on local structures around Tb ions implanted in SiO2 on Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 199. 231-234 doi:10.1016/s0168-583x(02)01543-4
	Hirata, K., Kobayashi, Y. (1998) Depth-selective defect analysis of Si implanted with As+ under channeling conditions using a variable-energy positron beam. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 136. 763-767 doi:10.1016/s0168-583x(97)00765-9
	Liang, Jenq-Horng (2001) Three-dimensional depth profiles of boron ions implanted in SiO2. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 180 (1). 216-221 doi:10.1016/s0168-583x(01)00420-7
	Yamashita, K., Yasue, T., Koshikawa, T., Ikeda, A., Kido, Y. (1998) High depth resolution analysis of “5 × 5” structure with medium energy ion scattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 136. 1086-1091 doi:10.1016/s0168-583x(97)00897-5