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Reutov, V.F. (1998) Methods of obtaining a uniform volume concentration of implanted ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 140 (3). 433-438 doi:10.1016/s0168-583x(98)00103-7

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Reference TypeJournal (article/letter/editorial)
TitleMethods of obtaining a uniform volume concentration of implanted ions
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsReutov, V.F.Author
Year1998 (May)Volume140
Issue3
PublisherElsevier BV
DOIdoi:10.1016/s0168-583x(98)00103-7Search in ResearchGate
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Mindat Ref. ID5615079Long-form Identifiermindat:1:5:5615079:5
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Full ReferenceReutov, V.F. (1998) Methods of obtaining a uniform volume concentration of implanted ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 140 (3). 433-438 doi:10.1016/s0168-583x(98)00103-7
Plain TextReutov, V.F. (1998) Methods of obtaining a uniform volume concentration of implanted ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 140 (3). 433-438 doi:10.1016/s0168-583x(98)00103-7
In(1998, May) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 140 (3) Elsevier BV

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(1998) Erratum. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 134 (3). 435pp. doi:10.1016/s0168-583x(98)00126-8
Liang, J.H. (1998) Theoretical formulation for calculating lateral spread of implanted ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 134 (2). 157-160 doi:10.1016/s0168-583x(98)80008-6
(2018) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 433. doi:10.1016/s0168-583x(18)30490-7
(1999) Index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 147 (1). 433-442 doi:10.1016/s0168-583x(98)00932-x
(1998) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 136. doi:10.1016/s0168-583x(98)90007-6
Kobayashi, Tomohiro, Terai, Takayuki (1999) Properties of metallic ions implanted into sapphire. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 148 (1). 1059-1063 doi:10.1016/s0168-583x(98)00881-7
(1998) Committees and sponsors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 136. doi:10.1016/s0168-583x(98)90008-8
(1998) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 134 (1). doi:10.1016/s0168-583x(98)80025-6
Reutov, V.F., Sokhatsky, A.S., Kutner, V.B., Lebedev, A.N. (1999) Structural modifications in silicon irradiated successively by N+ and He+ or Ar8+ and He+ ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 149 (3). 319-324 doi:10.1016/s0168-583x(98)00913-6
(1998) Author index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 136. 1367-1392 doi:10.1016/s0168-583x(98)90009-x
(1998) Calendar. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 134 (1). 153-155 doi:10.1016/s0168-583x(98)80045-1
 
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