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Yadav, Brajesh S., Major, S. S., Srinivasa, R. S. (2007) Growth and structure of sputtered gallium nitride films. Journal of Applied Physics, 102 (7). 73516pp. doi:10.1063/1.2786100

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and structure of sputtered gallium nitride films
JournalJournal of Applied Physics
AuthorsYadav, Brajesh S.Author
Major, S. S.Author
Srinivasa, R. S.Author
Year2007 (October)Volume102
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2786100Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5151802Long-form Identifiermindat:1:5:5151802:8
GUID0
Full ReferenceYadav, Brajesh S., Major, S. S., Srinivasa, R. S. (2007) Growth and structure of sputtered gallium nitride films. Journal of Applied Physics, 102 (7). 73516pp. doi:10.1063/1.2786100
Plain TextYadav, Brajesh S., Major, S. S., Srinivasa, R. S. (2007) Growth and structure of sputtered gallium nitride films. Journal of Applied Physics, 102 (7). 73516pp. doi:10.1063/1.2786100
In(2007, October) Journal of Applied Physics Vol. 102 (7) AIP Publishing

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Biswas, A., Bhattacharyya, D., Sahoo, N. K., Yadav, Brajesh S., Major, S. S., Srinivasa, R. S. (2008) Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target. Journal of Applied Physics, 103 (8). 83541pp. doi:10.1063/1.2903443
Preschilla A., Nisha, Major, S., Kumar, Nigvendra, Samajdar, I., Srinivasa, R. S. (2000) Nanocrystalline gallium nitride thin films. Applied Physics Letters, 77 (12). 1861pp. doi:10.1063/1.1311595
Misra, Abha, Tyagi, Pawan K., Yadav, Brajesh S., Rai, P., Misra, D. S., Pancholi, Vivek, Samajdar, I. D. (2006) Hexagonal diamond synthesis on h-GaN strained films. Applied Physics Letters, 89 (7). 71911pp. doi:10.1063/1.2218043
Kim, Esther, Berishev, I., Bensaoula, A., Lee, S., Perry, S. S., Waters, K., Schultz, J. A. (1997) Nucleation and growth of chemical beam epitaxy gallium nitride thin films. Applied Physics Letters, 71 (21). 3072-3074 doi:10.1063/1.120250
Li, W. S., Shen, Z. X., Feng, Z. C., Chua, S. J. (2000) Temperature dependence of Raman scattering in hexagonal gallium nitride films. Journal of Applied Physics, 87 (7). 3332-3337 doi:10.1063/1.372344
Chuang, R. W., Chang, S. P., Chang, S. J., Chiou, Y. Z., Lu, C. Y., Lin, T. K., Lin, Y. C., Kuo, C. F., Chang, H. M. (2007) Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates. Journal of Applied Physics, 102 (7). 73110pp. doi:10.1063/1.2786111
Jaydeep, Shreekala, Yadav, S., Malla, B. P., Kulkarni, A. R., Venkatramani, N. (2002) Growth and dielectric behavior of radio frequency magnetron-sputtered lead magnesium niobate thin films. Applied Physics Letters, 81 (20). 3840-3842 doi:10.1063/1.1517175
Tomás, S. A., Stolik, S., Palomino, R., Lozada, R., Persson, C., Pepe, I., da Silva, A. Ferreira (2005) Influence of rhodamine 6G doping on the optical properties of TiO2 sol-gel films. Journal of Applied Physics, 98 (7). 73516pp. doi:10.1063/1.2073972
Doppalapudi, D., Iliopoulos, E., Basu, S. N., Moustakas, T. D. (1999) Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy. Journal of Applied Physics, 85 (7). 3582-3589 doi:10.1063/1.369718
Simpkins, B. S., Pehrsson, P. E., Taheri, M. L., Stroud, R. M. (2007) Diameter control of gallium nitride nanowires. Journal of Applied Physics, 101 (9). 94305pp. doi:10.1063/1.2728782
Peponas, S., Benlahsen, M., Guedda, M. (2009) On the delamination dynamic of sputtered amorphous carbon nitride films. Journal of Applied Physics, 106 (1). 13525pp. doi:10.1063/1.3156656
 
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