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Simpkins, B. S., Pehrsson, P. E., Taheri, M. L., Stroud, R. M. (2007) Diameter control of gallium nitride nanowires. Journal of Applied Physics, 101 (9). 94305pp. doi:10.1063/1.2728782

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Reference TypeJournal (article/letter/editorial)
TitleDiameter control of gallium nitride nanowires
JournalJournal of Applied Physics
AuthorsSimpkins, B. S.Author
Pehrsson, P. E.Author
Taheri, M. L.Author
Stroud, R. M.Author
Year2007 (May)Volume101
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.2728782Search in ResearchGate
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Mindat Ref. ID5149349Long-form Identifiermindat:1:5:5149349:1
GUID0
Full ReferenceSimpkins, B. S., Pehrsson, P. E., Taheri, M. L., Stroud, R. M. (2007) Diameter control of gallium nitride nanowires. Journal of Applied Physics, 101 (9). 94305pp. doi:10.1063/1.2728782
Plain TextSimpkins, B. S., Pehrsson, P. E., Taheri, M. L., Stroud, R. M. (2007) Diameter control of gallium nitride nanowires. Journal of Applied Physics, 101 (9). 94305pp. doi:10.1063/1.2728782
In(2007, May) Journal of Applied Physics Vol. 101 (9) AIP Publishing

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Simpkins, B. S., Mastro, M. A., Eddy, C. R., Pehrsson, P. E. (2009) Surface-Induced Transients in Gallium Nitride Nanowires. The Journal of Physical Chemistry C, 113 (22). 9480-9485 doi:10.1021/jp901122k
Simpkins, B. S., Mastro, M. A., Eddy, C. R., Pehrsson, P. E. (2008) Surface depletion effects in semiconducting nanowires. Journal of Applied Physics, 103 (10). 104313pp. doi:10.1063/1.2932072
Simpkins, B. S., Pehrsson, P. E., Laracuente, A. R. (2006) Electronic conduction in GaN nanowires. Applied Physics Letters, 88 (7). 72111pp. doi:10.1063/1.2177629
Simpkins, B. S., Brintlinger, T., Stroud, R. M., Sherrill, S., Lee, S. B., Pehrsson, P. E. (2013) Controlling the Crystallinity of Electrochemically Deposited CdS Nanowires. The Journal of Physical Chemistry C, 117 (22). 11843-11849 doi:10.1021/jp4026893
Taheri, ML, Simpkins, B, Pehrsson, P, Stroud, RM (2006) Lift-out and In-situ STM-TEM Studies of Individual GaN Nanowires. Microscopy and Microanalysis, 12. 702-703 doi:10.1017/s1431927606068619
Simpkins, B. S., Mastro, M. A., Eddy, C. R., Hite, J. K., Pehrsson, P. E. (2011) Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires. Journal of Applied Physics, 110 (4). 44303pp. doi:10.1063/1.3622145
Long, J. P., Flynn, R. A., Vurgaftman, I., Simpkins, B. S., Mäkinen, A. J., Mastro, M. A., Pehrsson, P. E. (2010) Transverse-microcavity modulation of photoluminescence from GaN nanowires. Applied Physics Letters, 97 (10). 103105pp. doi:10.1063/1.3488018
Simpkins, B.S., Ericson, L.M., Stroud, R.M., Pettigrew, K.A., Pehrsson, P.E. (2006) Gallium-based catalysts for growth of GaN nanowires. Journal of Crystal Growth, 290 (1). 115-120 doi:10.1016/j.jcrysgro.2005.12.095
Ghassemi, H., Lang, A., Johnson, C., Wang, R., Song, B., Phillips, P., Qiao, Q., Klie, R. F., Xing, H. G., Taheri, M. L. (2013) Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias. Journal of Applied Physics, 114 (6). 64507pp. doi:10.1063/1.4818450
Mastro, M.A., Maximenko, S., Gowda, M., Simpkins, B.S., Pehrsson, P.E., Long, J.P., Makinen, A.J., Freitas, J.A., Hite, J.K., Eddy, C.R., Kim, J. (2009) Nature of luminescence and strain in gallium nitride nanowires. Journal of Crystal Growth, 311 (10). 2982-2986 doi:10.1016/j.jcrysgro.2009.01.053
Paiano, P., Prete, P., Lovergine, N., Mancini, A. M. (2006) Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine. Journal of Applied Physics, 100 (9). 94305pp. doi:10.1063/1.2364603
 
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