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Lei, S. Y., Shen, B., Cao, L., Yang, Z. J., Zhang, G. Y. (2007) Intersubband transitions in asymmetric AlxGa1−xN∕GaN double quantum wells. Journal of Applied Physics, 101 (12). 123108pp. doi:10.1063/1.2745422

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Reference TypeJournal (article/letter/editorial)
TitleIntersubband transitions in asymmetric AlxGa1−xN∕GaN double quantum wells
JournalJournal of Applied Physics
AuthorsLei, S. Y.Author
Shen, B.Author
Cao, L.Author
Yang, Z. J.Author
Zhang, G. Y.Author
Year2007 (June 15)Volume101
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2745422Search in ResearchGate
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Mindat Ref. ID5146014Long-form Identifiermindat:1:5:5146014:7
GUID0
Full ReferenceLei, S. Y., Shen, B., Cao, L., Yang, Z. J., Zhang, G. Y. (2007) Intersubband transitions in asymmetric AlxGa1−xN∕GaN double quantum wells. Journal of Applied Physics, 101 (12). 123108pp. doi:10.1063/1.2745422
Plain TextLei, S. Y., Shen, B., Cao, L., Yang, Z. J., Zhang, G. Y. (2007) Intersubband transitions in asymmetric AlxGa1−xN∕GaN double quantum wells. Journal of Applied Physics, 101 (12). 123108pp. doi:10.1063/1.2745422
In(2007, June) Journal of Applied Physics Vol. 101 (12) AIP Publishing

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Lei, S. Y., Shen, B., Cao, L., Xu, F. J., Yang, Z. J., Xu, K., Zhang, G. Y. (2006) Influence of polarization-induced electric field on the wavelength and the absorption coefficient of the intersubband transitions in AlxGa1−xN∕GaN double quantum wells. Journal of Applied Physics, 99 (7). 74501pp. doi:10.1063/1.2186381
Lei, S Y, Dong, Z G, Shen, B, Zhang, G Y (2008) Three-energy-level system in asymmetric AlxGa1−xN/GaN double quantum wells. Journal of Physics D: Applied Physics, 41. 65101pp. doi:10.1088/0022-3727/41/6/065101
Huang, C. C., Xu, F. J., Yan, X. D., Song, J., Xu, Z. Y., Cen, L. B., Wang, Y., Pan, J. H., Wang, X. Q., Yang, Z. J., Shen, B., Zhang, B. S., Chen, X. S., Lu, W. (2011) Intersubband transitions at atmospheric window in AlxGa1−xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer. Applied Physics Letters, 98 (13). 132105pp. doi:10.1063/1.3573798
Cen, L. B., Shen, B., Qin, Z. X., Zhang, G. Y. (2009) Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells. Journal of Applied Physics, 105 (5). 53106pp. doi:10.1063/1.3091280
Lei, S.Y., Dong, Z.G., Shen, B., Zhang, G.Y. (2008) Intersubband transition in symmetric AlxGa1−xN/GaN double quantum wells with applied electric field. Physics Letters A, 373. 136-139 doi:10.1016/j.physleta.2008.10.091
Saidi, Imen (2019) Intersubband resonant enhancement of second order-nonlinear susceptibility in asymmetric AlxGa1−xN/GaN double quantum wells. Journal of Applied Physics, 126 (13). 135704pp. doi:10.1063/1.5110176
Cen, L. B., Shen, B., Qin, Z. X., Zhang, G. Y. (2008) Influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions in AlN/GaN coupled double quantum wells. Journal of Applied Physics, 104 (6). 63114pp. doi:10.1063/1.2980320
Gmachl, Claire, Ng, Hock M., Cho, Alfred Y. (2001) Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells. Applied Physics Letters, 79 (11). 1590-1592 doi:10.1063/1.1403277
Cen, L. B., Shen, B., Qin, Z. X., Zhang, G. Y. (2009) Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells. Journal of Applied Physics, 105 (9). 93109pp. doi:10.1063/1.3124373
Zheng, Z. W., Shen, B., Gui, Y. S., Jiang, C. P., Tang, N., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Zheng, G. Z., Chu, J. H., Someya, T., Arakawa, Y. (2003) Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1−xN/GaN heterointerfaces. Applied Physics Letters, 82 (12). 1872-1874 doi:10.1063/1.1557772
Li, J. M., Qian, K. Y., Zhu, Q. S., Wang, Z. G. (2007) Intrasubband and intersubband transitions in GaAs∕AlxGa1−xAs multiple quantum wells. Applied Physics Letters, 90 (16). 162111pp. doi:10.1063/1.2722566
 
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