Zheng, Z. W., Shen, B., Gui, Y. S., Jiang, C. P., Tang, N., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Zheng, G. Z., Chu, J. H., Someya, T., Arakawa, Y. (2003) Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1−xN/GaN heterointerfaces. Applied Physics Letters, 82 (12). 1872-1874 doi:10.1063/1.1557772

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	Zheng, Z. W., Shen, B., Zhang, R., Gui, Y. S., Jiang, C. P., Ma, Z. X., Zheng, G. Z., Guo, S. L., Shi, Y., Han, P., Zheng, Y. D., Someya, T., Arakawa, Y. (2000) Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well atAlxGa1−xN/GaNheterostructures. Physical Review B, 62 (12) doi:10.1103/physrevb.62.r7739
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	Jiang, C. P., Guo, S. L., Huang, Z. M., Yu, J., Gui, Y. S., Zheng, G. Z., Chu, J. H., Zheng, Z. W., Shen, B., Zheng, Y. D. (2001) Subband electron properties of modulation-doped AlxGa1−xN/GaN heterostructures with different barrier thicknesses. Applied Physics Letters, 79 (3). 374-376 doi:10.1063/1.1386620
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	Li, Z.-F., Lu, W., Shen, S. C., Holland, S., Hu, C. M., Heitmann, D., Shen, B., Zheng, Y. D., Someya, T., Arakawa, Y. (2002) Cyclotron resonance and magnetotransport measurements in AlxGa1−xN/GaN heterostructures for x=0.15–0.30. Applied Physics Letters, 80 (3). 431-433 doi:10.1063/1.1435074
	Gui, Y. S., Zheng, G. Z., Chu, J. H., Guo, S. L., Zhang, X. C., Tang, D. Y., Cai, Yi (1997) Electrical characterization of subbands in the HgCdTe surface layer. Journal of Applied Physics, 82 (10). 5000-5004 doi:10.1063/1.366369
	Zhou, W. Z., Lin, T., Shang, L. Y., Sun, L., Gao, K. H., Zhou, Y. M., Yu, G., Tang, N., Han, K., Shen, B., Guo, S. L., Gui, Y. S., Chu, J. H. (2008) Weak antilocalization and beating pattern in high electron mobility AlxGa1−xN/GaN two-dimensional electron gas with strong Rashba spin-orbit coupling. Journal of Applied Physics, 104 (5). 53703pp. doi:10.1063/1.2974091
	Shen, B., Someya, T., Arakawa, Y. (2000) Influence of strain relaxation of the AlxGa1−xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructures. Applied Physics Letters, 76 (19). 2746-2748 doi:10.1063/1.126463