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Li, J. M., Qian, K. Y., Zhu, Q. S., Wang, Z. G. (2007) Intrasubband and intersubband transitions in GaAs∕AlxGa1−xAs multiple quantum wells. Applied Physics Letters, 90 (16). 162111pp. doi:10.1063/1.2722566

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Reference TypeJournal (article/letter/editorial)
TitleIntrasubband and intersubband transitions in GaAs∕AlxGa1−xAs multiple quantum wells
JournalApplied Physics Letters
AuthorsLi, J. M.Author
Qian, K. Y.Author
Zhu, Q. S.Author
Wang, Z. G.Author
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2722566Search in ResearchGate
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Mindat Ref. ID8553452Long-form Identifiermindat:1:5:8553452:6
GUID0
Full ReferenceLi, J. M., Qian, K. Y., Zhu, Q. S., Wang, Z. G. (2007) Intrasubband and intersubband transitions in GaAs∕AlxGa1−xAs multiple quantum wells. Applied Physics Letters, 90 (16). 162111pp. doi:10.1063/1.2722566
Plain TextLi, J. M., Qian, K. Y., Zhu, Q. S., Wang, Z. G. (2007) Intrasubband and intersubband transitions in GaAs∕AlxGa1−xAs multiple quantum wells. Applied Physics Letters, 90 (16). 162111pp. doi:10.1063/1.2722566
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

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Lei, S. Y., Shen, B., Cao, L., Yang, Z. J., Zhang, G. Y. (2007) Intersubband transitions in asymmetric AlxGa1−xN∕GaN double quantum wells. Journal of Applied Physics, 101 (12). 123108pp. doi:10.1063/1.2745422
Kuhn, Kelin J., Iyengar, Gita U., Yee, Sinclair (1991) Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in AlxGa1−xAs/GaAs/AlxGa1−xAs quantum wells. Journal of Applied Physics, 70 (9). 5010-5017 doi:10.1063/1.349005
Zhu, Qin-Sheng, Wang, X. B., Zhong, Z. T., Zhou, X. C., He, Y. P., Cao, Z. P., Zhang, G. Z., Xiao, J., Sun, X. H., Yang, H. Z., Du, Q. G. (1998) Intrasubband and intersubband transitions in lightly and heavily dopedGaAs/AlxGa1−xAsmultiple quantum wells. Physical Review B, 57 (19) 12388-12396 doi:10.1103/physrevb.57.12388
Wang, S. M., Treideris, G., Chen, W. Q., Andersson, T. G. (1993) Growth of analog AlxGa1−xAs/GaAs parabolic quantum wells by molecular beam epitaxy. Applied Physics Letters, 62 (1). 61-62 doi:10.1063/1.108819
Nakayama, M., Kuwahara, H., Kato, H., Kubota, K. (1987) Intersubband transitions in GaAs‐AlxGa1−xAs modulation‐doped superlattices. Applied Physics Letters, 51 (21). 1741-1743 doi:10.1063/1.98509
Duboz, J.-Y., Gupta, J. A., Byloss, M., Aers, G. C., Liu, H. C., Wasilewski, Z. R. (2002) Intersubband transitions in InGaNAs/GaAs quantum wells. Applied Physics Letters, 81 (10). 1836-1838 doi:10.1063/1.1500434
Julien, F. H., Lourtioz, J.‐M., Herschkorn, N., Delacourt, D., Pocholle, J. P., Papuchon, M., Planel, R., Le Roux, G. (1988) Optical saturation of intersubband absorption in GaAs‐AlxGa1−xAs quantum wells. Applied Physics Letters, 53 (2). 116-118 doi:10.1063/1.100386
Gerber, D. S., Droopad, R., Maracas, G. N. (1993) Comparison of electroabsorption in asymmetric triangular and rectangular GaAs/AlxGa1−xAs multiple quantum wells. Applied Physics Letters, 62 (5). 525-527 doi:10.1063/1.108900
Le, H. Q., Zayhowski, J. J., Goodhue, W. D. (1987) Stark effect in AlxGa1−xAs/GaAs coupled quantum wells. Applied Physics Letters, 50 (21). 1518-1520 doi:10.1063/1.97818
Bajema, K., Merlin, R., Juang, F.-Y., Hong, S.-C., Singh, J., Bhattacharya, P. K. (1987) Stark effect in GaAs-AlxGa1−xAs quantum wells: Light scattering by intersubband transitions. Physical Review B, 36 (2) 1300-1302 doi:10.1103/physrevb.36.1300
Fox, A. M., Ispasoiu, R. G., Foxon, C. T., Cunningham, J. E., Jan, W. Y (1993) Carrier escape mechanisms from GaAs/AlxGa1−xAs multiple quantum wells in an electric field. Applied Physics Letters, 63 (21). 2917-2919 doi:10.1063/1.110272
 
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