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Ali, Muhammad Yusuf, Tao, Meng (2007) Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole. Journal of Applied Physics, 101 (10). 103708pp. doi:10.1063/1.2733611

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Reference TypeJournal (article/letter/editorial)
TitleEffect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole
JournalJournal of Applied Physics
AuthorsAli, Muhammad YusufAuthor
Tao, MengAuthor
Year2007 (May 15)Volume101
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2733611Search in ResearchGate
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Mindat Ref. ID5145371Long-form Identifiermindat:1:5:5145371:2
GUID0
Full ReferenceAli, Muhammad Yusuf, Tao, Meng (2007) Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole. Journal of Applied Physics, 101 (10). 103708pp. doi:10.1063/1.2733611
Plain TextAli, Muhammad Yusuf, Tao, Meng (2007) Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole. Journal of Applied Physics, 101 (10). 103708pp. doi:10.1063/1.2733611
In(2007, May) Journal of Applied Physics Vol. 101 (10) AIP Publishing

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Wu, C. M., Yang, E. S. (1980) Modification of Schottky barrier height by surface grain boundaries of polycrystalline silicon. Applied Physics Letters, 37 (10). 945-947 doi:10.1063/1.91770
Sampath Kumar, V., Niranjan, Manish K. (2014) Effect of surface structure on workfunction and Schottky-barrier height in SrRuO3/SrTiO3 (001) heterojunctions. Journal of Applied Physics, 115 (17). 173705pp. doi:10.1063/1.4872466
Li, Yang, Long, Wei, Tung, Raymond T. (2013) Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces. Applied Surface Science, 284. 720-725 doi:10.1016/j.apsusc.2013.07.162
Wu, Ching‐Yuan (1980) Barrier height reduction of the Schottky barrier diode using a thin highly doped surface layer. Journal of Applied Physics, 51 (9). 4919-4922 doi:10.1063/1.328365
Cowley, A. M., Sze, S. M. (1965) Surface States and Barrier Height of Metal‐Semiconductor Systems. Journal of Applied Physics, 36 (10). 3212-3220 doi:10.1063/1.1702952
Tao, Meng (2018) Removal of surface states on Si(1 0 0) by valence-mending passivation. Applied Surface Science, 462. 8-17 doi:10.1016/j.apsusc.2018.08.049
Courtin, , Moréac, , Delhaye, , Lépine, , Tricot, , Turban, , Schieffer, , Breton, (2019) Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation. Applied Sciences, 9. 5014pp. doi:10.3390/app9235014
Hamaide, G., Allibert, F., Hovel, H., Cristoloveanu, S. (2007) Impact of free-surface passivation on silicon on insulator buried interface properties by pseudotransistor characterization. Journal of Applied Physics, 101 (11). 114513pp. doi:10.1063/1.2745398
Hwang, K. C., Li, Sheng S. (1990) A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes. Journal of Applied Physics, 67 (4). 2162-2165 doi:10.1063/1.345555
Hwang, K. C., Li, Sheng S., Park, C., Anderson, T. J. (1990) Schottky barrier height enhancement ofn‐In0.53Ga0.47As by a novel chemical passivation technique. Journal of Applied Physics, 67 (10). 6571-6573 doi:10.1063/1.345138
Soubiron, T., Stiufiuc, R., Patout, L., Deresmes, D., Grandidier, B., Stiévenard, D., Köble, J., Maier, M. (2007) Transport limitations and Schottky barrier height in titanium silicide nanowires grown on the Si(111) surface. Applied Physics Letters, 90 (10). 102112pp. doi:10.1063/1.2711378
 
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