登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Hwang, K. C., Li, Sheng S., Park, C., Anderson, T. J. (1990) Schottky barrier height enhancement ofn‐In0.53Ga0.47As by a novel chemical passivation technique. Journal of Applied Physics, 67 (10). 6571-6573 doi:10.1063/1.345138

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSchottky barrier height enhancement ofn‐In0.53Ga0.47As by a novel chemical passivation technique
JournalJournal of Applied Physics
AuthorsHwang, K. C.Author
Li, Sheng S.Author
Park, C.Author
Anderson, T. J.Author
Year1990 (May 15)Volume67
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.345138Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5043633Long-form Identifiermindat:1:5:5043633:8
GUID0
Full ReferenceHwang, K. C., Li, Sheng S., Park, C., Anderson, T. J. (1990) Schottky barrier height enhancement ofn‐In0.53Ga0.47As by a novel chemical passivation technique. Journal of Applied Physics, 67 (10). 6571-6573 doi:10.1063/1.345138
Plain TextHwang, K. C., Li, Sheng S., Park, C., Anderson, T. J. (1990) Schottky barrier height enhancement ofn‐In0.53Ga0.47As by a novel chemical passivation technique. Journal of Applied Physics, 67 (10). 6571-6573 doi:10.1063/1.345138
In(1990, May) Journal of Applied Physics Vol. 67 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Hwang, K. C., Li, Sheng S. (1990) A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes. Journal of Applied Physics, 67 (4). 2162-2165 doi:10.1063/1.345555
Lee, H. J., Anderson, W. A., Hardtdegen, H., Lüth, H. (1993) Barrier height enhancement of Schottky diodes onn‐In0.53Ga0.47As by cryogenic processing. Applied Physics Letters, 63 (14). 1939-1941 doi:10.1063/1.110607
Kordoš, P., Marso, M., Meyer, R., Lüth, H. (1992) Schottky barrier height enhancement onn‐In0.53Ga0.47As. Journal of Applied Physics, 72 (6). 2347-2355 doi:10.1063/1.351576
Ali, S. T., Kumar, A., Bose, D. N. (1995) Schottky barrier height enhancement on n-In0.53Ga0.47As by (NH4)2Sx surface treatment. Journal of Materials Science, 30. 5031-5035 doi:10.1007/bf01154518
Hwang, J. S., Chang, C. C., Chen, M. F., Chen, C. C., Lin, K. I., Tang, F. C., Hong, M., Kwo, J. (2003) Schottky barrier height and interfacial state density on oxide-GaAs interface. Journal of Applied Physics, 94 (1). 348-353 doi:10.1063/1.1578528
Sands, T., Chan, W. K., Chang, C. C., Chase, E. W., Keramidas, V. G. (1988) NiAl/n‐GaAs Schottky diodes: Barrier height enhancement by high‐temperature annealing. Applied Physics Letters, 52 (16). 1338-1340 doi:10.1063/1.99152
Lee, D. H., Li, Sheng S., Sauer, N. J., Chang, T. Y. (1989) High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As. Applied Physics Letters, 54 (19). 1863-1865 doi:10.1063/1.101261
Wang, A. Z., Anderson, W. A. (1995) Enhancement of the Schottky barrier height of Au/ZnSSe diodes. Applied Physics Letters, 66 (15). 1963-1965 doi:10.1063/1.113291
Lee, J. S., Park, C. S., Yang, J. W., Kang, J. Y., Ma, D. S. (1990) Properties of WNxfilms and WNx/GaAs Schottky diodes prepared by ion beam assisted deposition technique. Journal of Applied Physics, 67 (2). 1134-1136 doi:10.1063/1.345759
Ytterdal, T., Shur, M. S., Hurt, M., Peatman, W. C. B. (1997) Enhancement of Schottky barrier height in heterodimensional metal-semiconductor contacts. Applied Physics Letters, 70 (4). 441-442 doi:10.1063/1.118175
Brucker, C. F., Brillson, L. J. (1981) New method for control of Schottky‐barrier height. Applied Physics Letters, 39 (1). 67-69 doi:10.1063/1.92518
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.9 01:50:48
Go to top of page