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Hwang, K. C., Li, Sheng S. (1990) A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes. Journal of Applied Physics, 67 (4). 2162-2165 doi:10.1063/1.345555

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Reference TypeJournal (article/letter/editorial)
TitleA study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes
JournalJournal of Applied Physics
AuthorsHwang, K. C.Author
Li, Sheng S.Author
Year1990 (February 15)Volume67
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.345555Search in ResearchGate
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Mindat Ref. ID5044579Long-form Identifiermindat:1:5:5044579:8
GUID0
Full ReferenceHwang, K. C., Li, Sheng S. (1990) A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes. Journal of Applied Physics, 67 (4). 2162-2165 doi:10.1063/1.345555
Plain TextHwang, K. C., Li, Sheng S. (1990) A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes. Journal of Applied Physics, 67 (4). 2162-2165 doi:10.1063/1.345555
In(1990, February) Journal of Applied Physics Vol. 67 (4) AIP Publishing

See Also

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Hwang, K. C., Li, Sheng S., Park, C., Anderson, T. J. (1990) Schottky barrier height enhancement ofn‐In0.53Ga0.47As by a novel chemical passivation technique. Journal of Applied Physics, 67 (10). 6571-6573 doi:10.1063/1.345138
Jeng, Ming-Jer, Wang, Hung-Tsung, Chang, Liann-Be, Lin, Ray-Ming (2001) Surface Passivation Using P2S5/(NH4)2Sxand Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes. Japanese Journal of Applied Physics, 40. 562-564 doi:10.1143/jjap.40.562
Carpenter, M. S., Melloch, M. R., Dungan, T. E. (1988) Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs. Applied Physics Letters, 53 (1). 66-68 doi:10.1063/1.100572
Hewett, C. A., Fernandes, M. G., Lau, S. S. (1990) Improved uniformity of PtSi Schottky barrier diodes formed using an ion mixing scheme. Journal of Applied Physics, 67 (1). 524-527 doi:10.1063/1.345237
Jeng, Ming-Jer, Wang, Hung-Tsung, Chang, Liann-Be, Cheng, Yi-Chang, Chou, Shu-Tsun (1999) Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments. Journal of Applied Physics, 86 (11). 6261-6263 doi:10.1063/1.371682
Mada, Yoichi, Wada, Kazumi, Wada, Yoshinori (1992) Passivation of (NH4)2S‐treated GaAs surface with an As2S3film. Applied Physics Letters, 61 (25). 2993-2995 doi:10.1063/1.108013
Sinha, A. K. (1975) Metallization scheme forn−GaAs Schottky diodes incorporating sintered contacts and a W diffusion barrier. Applied Physics Letters, 26 (4). 171-173 doi:10.1063/1.88103
Pellegrini, P. W., Ludington, C. E., Weeks, M. M. (1990) The dependence of Schottky barrier potential on substrate orientation in PtSi infrared diodes. Journal of Applied Physics, 67 (3). 1417-1420 doi:10.1063/1.345699
Moon, C. R., Choe, Byung-Doo, Kwon, S. D., Lim, H. (1997) Difference of interface trap passivation in Schottky contacts formed on (NH4)2Sx-treated GaAs and In0.5Ga0.5P. Journal of Applied Physics, 81 (6). 2904-2906 doi:10.1063/1.365555
Li, Sheng S. (1978) A Proposed Novel MPN GaAs Schottky Barrier Solar Cell. Japanese Journal of Applied Physics, 17. 291 doi:10.7567/jjaps.17s1.291
Dimitriadis, C. A. (1990) Effect of conventional and rapid thermal annealing on platinum silicide Schottky barrier diodes. Applied Physics Letters, 56 (2). 143-145 doi:10.1063/1.103055
 
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