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Kobayashi, Hikaru, Yuasa, Toshiro, Nakato, Yoshihiro, Yoneda, Kenji, Todokoro, Yoshihiro (1996) Low temperature catalytic formation of Si‐based metal–oxide–semiconductor structure. Journal of Applied Physics, 80 (7). 4124-4128 doi:10.1063/1.363284

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Reference TypeJournal (article/letter/editorial)
TitleLow temperature catalytic formation of Si‐based metal–oxide–semiconductor structure
JournalJournal of Applied Physics
AuthorsKobayashi, HikaruAuthor
Yuasa, ToshiroAuthor
Nakato, YoshihiroAuthor
Yoneda, KenjiAuthor
Todokoro, YoshihiroAuthor
Year1996 (October)Volume80
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.363284Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5082953Long-form Identifiermindat:1:5:5082953:8
GUID0
Full ReferenceKobayashi, Hikaru, Yuasa, Toshiro, Nakato, Yoshihiro, Yoneda, Kenji, Todokoro, Yoshihiro (1996) Low temperature catalytic formation of Si‐based metal–oxide–semiconductor structure. Journal of Applied Physics, 80 (7). 4124-4128 doi:10.1063/1.363284
Plain TextKobayashi, Hikaru, Yuasa, Toshiro, Nakato, Yoshihiro, Yoneda, Kenji, Todokoro, Yoshihiro (1996) Low temperature catalytic formation of Si‐based metal–oxide–semiconductor structure. Journal of Applied Physics, 80 (7). 4124-4128 doi:10.1063/1.363284
In(1996, October) Journal of Applied Physics Vol. 80 (7) AIP Publishing

See Also

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Yuasa, Toshiro, Asuha, , Yoneda, Kenji, Todokoro, Yoshihiro, Kobayashi, Hikaru (2000) Reduction in leakage current density of Si-based metal–oxide–semiconductor structure by use of catalytic activity of a platinum overlayer. Applied Physics Letters, 77 (24). 4031-4033 doi:10.1063/1.1331079
Kobayashi, Hikaru, Yuasa, Toshiro, Yamanaka, Kazuhiro, Yoneda, Kenji, Todokoro, Yoshihiro (1998) Mechanism of platinum-enhanced oxidation of silicon at low temperatures. The Journal of Chemical Physics, 109 (12). 4997-5001 doi:10.1063/1.477112
Mizokuro, Toshiko, Yoneda, Kenji, Todokoro, Yoshihiro, Kobayashi, Hikaru (1999) Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact. Journal of Applied Physics, 85 (5). 2921-2928 doi:10.1063/1.369633
Asano, Akira, Asuha, , Maida, Osamu, Todokoro, Yoshihiro, Kobayashi, Hikaru (2002) Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment. Applied Physics Letters, 80 (24). 4552-4554 doi:10.1063/1.1484249
Kobayashi, Hikaru, Asano, Akira, Takahashi, Masao, Yoneda, Kenji, Todokoro, Yoshihiro (2000) Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment. Applied Physics Letters, 77 (26). 4392-4394 doi:10.1063/1.1332982
Kobayashi, Hikaru, Yamashita, Yoshiyuki, Namba, Kenji, Nakato, Yoshihiro (1994) Direct Spectroscopic Evidence of Bias-Induced Shifts of Semiconductor Band Edges for Metal-Insulator-Semiconductor Diodes. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l754
Kubota, Tomohiro, Nakato, Yoshihiro, Yoneda, Kenji, Kobayashi, Hikaru (1997) Platinum-enhanced oxidation of GaAs. Physical Review B, 56 (12) 7428-7434 doi:10.1103/physrevb.56.7428
Kobayashi, Hikaru, Asano, Akira, Asada, Shinya, Kubota, Tomohiro, Yamashita, Yoshiyuki, Yoneda, Kenji, Todokoro, Yoshihiro (1998) Studies on interface states at ultrathin SiO2/Si(100) interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by cyanide treatment. Journal of Applied Physics, 83 (4). 2098-2103 doi:10.1063/1.366943
Kobayashi, Hikaru, Kubota, Tomohiro, Kawa, Hidefumi, Nakato, Yoshihiro, Nishiyama, Masayoshi (1998) Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer. Applied Physics Letters, 73 (7). 933-935 doi:10.1063/1.122042
Asuha, , Kobayashi, Takuya, Maida, Osamu, Inoue, Morio, Takahashi, Masao, Todokoro, Yoshihiro, Kobayashi, Hikaru (2002) Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si. Applied Physics Letters, 81 (18). 3410-3412 doi:10.1063/1.1517723
Kobayashi, H., Mizokuro, T., Nakato, Y., Yoneda, K., Todokoro, Y. (1997) Nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact. Applied Physics Letters, 71 (14). 1978-1980 doi:10.1063/1.119760
 
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