Asuha, , Kobayashi, Takuya, Maida, Osamu, Inoue, Morio, Takahashi, Masao, Todokoro, Yoshihiro, Kobayashi, Hikaru (2002) Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si. Applied Physics Letters, 81 (18). 3410-3412 doi:10.1063/1.1517723

See Also

These are possibly similar items as determined by title/reference text matching only.

	Kobayashi Asuha, Hikaru, Maida, Osamu, Takahashi, Masao, Iwasa, Hitoo (2003) Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density. Journal of Applied Physics, 94 (11). 7328-7335 doi:10.1063/1.1621720
	Asano, Akira, Asuha, , Maida, Osamu, Todokoro, Yoshihiro, Kobayashi, Hikaru (2002) Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment. Applied Physics Letters, 80 (24). 4552-4554 doi:10.1063/1.1484249
	Takahashi, Masao, Tamura, Masafumi, Asuha, , Kobayashi, Takuya, Kobayashi, Hikaru (2003) Ultrathin silicon oxynitride formed by low-energy electron impact plasma nitridation and chemical oxidation methods. Journal of Applied Physics, 94 (1). 726-731 doi:10.1063/1.1578702
	Asuha, , Liu, Yueh-Ling, Maida, Osamu, Takahashi, Masao, Kobayashi, Hikaru (2004) Postoxidation Annealing Treatments to Improve Si/Ultrathin SiO[sub 2] Characteristics Formed by Nitric Acid Oxidation. Journal of the Electrochemical Society, 151. doi:10.1149/1.1809594
	Yuasa, Toshiro, Asuha, , Yoneda, Kenji, Todokoro, Yoshihiro, Kobayashi, Hikaru (2000) Reduction in leakage current density of Si-based metal–oxide–semiconductor structure by use of catalytic activity of a platinum overlayer. Applied Physics Letters, 77 (24). 4031-4033 doi:10.1063/1.1331079
	Asuha, , Kobayashi, Takuya, Takahashi, Masao, Iwasa, Hitoo, Kobayashi, Hikaru (2003) Spectroscopic and electrical properties of ultrathin SiO2 layers formed with nitric acid. Surface Science, 547 (3). 275-283 doi:10.1016/j.susc.2003.09.016
	Asuha, , Yuasa, Toshiro, Maida, Osamu, Kobayashi, Hikaru (2002) Effects of postmetallization annealing on ultrathin SiO2 layer properties. Applied Physics Letters, 80 (22). 4175-4177 doi:10.1063/1.1482147
	Kobayashi, Hikaru, Asano, Akira, Takahashi, Masao, Yoneda, Kenji, Todokoro, Yoshihiro (2000) Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment. Applied Physics Letters, 77 (26). 4392-4394 doi:10.1063/1.1332982
	Kobayashi, Takuya, Tanaka, Kazuki, Maida, Osamu, Kobayashi, Hikaru (2004) Control of flatband voltage of Si-based metal–oxide–semiconductor diodes by inclusion of cesium ions in silicon dioxide. Applied Physics Letters, 85 (14). 2806-2808 doi:10.1063/1.1799232
	Mizokuro, Toshiko, Tamura, Masafumi, Yuasa, Toshiro, Kobayashi, Takuya, Maida, Osamu, Takakashi, Masao, Kobayashi, Hikaru (2002) Improvement of electrical characteristics of silicon oxynitride layers by a platinum method. Applied Surface Science, 199. 248-253 doi:10.1016/s0169-4332(02)00842-5
	Asuha, , Imai, Shigeki, Takahashi, Masao, Kobayashi, Hikaru (2004) Nitric acid oxidation of silicon at ∼120°C to form 3.5-nm SiO2∕Si structure with good electrical characteristics. Applied Physics Letters, 85 (17). 3783-3785 doi:10.1063/1.1804255