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Asuha, , Imai, Shigeki, Takahashi, Masao, Kobayashi, Hikaru (2004) Nitric acid oxidation of silicon at ∼120°C to form 3.5-nm SiO2∕Si structure with good electrical characteristics. Applied Physics Letters, 85 (17). 3783-3785 doi:10.1063/1.1804255

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Reference TypeJournal (article/letter/editorial)
TitleNitric acid oxidation of silicon at ∼120°C to form 3.5-nm SiO2∕Si structure with good electrical characteristics
JournalApplied Physics Letters
AuthorsAsuha, Author
Imai, ShigekiAuthor
Takahashi, MasaoAuthor
Kobayashi, HikaruAuthor
Year2004 (October 25)Volume85
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.1804255Search in ResearchGate
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Mindat Ref. ID8540372Long-form Identifiermindat:1:5:8540372:1
GUID0
Full ReferenceAsuha, , Imai, Shigeki, Takahashi, Masao, Kobayashi, Hikaru (2004) Nitric acid oxidation of silicon at ∼120°C to form 3.5-nm SiO2∕Si structure with good electrical characteristics. Applied Physics Letters, 85 (17). 3783-3785 doi:10.1063/1.1804255
Plain TextAsuha, , Imai, Shigeki, Takahashi, Masao, Kobayashi, Hikaru (2004) Nitric acid oxidation of silicon at ∼120°C to form 3.5-nm SiO2∕Si structure with good electrical characteristics. Applied Physics Letters, 85 (17). 3783-3785 doi:10.1063/1.1804255
In(2004, October) Applied Physics Letters Vol. 85 (17) AIP Publishing

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Imamura, Kentaro, Takahashi, Masao, Asuha, , Hirayama, Yasuhiro, Imai, Shigeki, Kobayashi, Hikaru (2010) Nitric acid oxidation of Si method at 120 °C: HNO3 concentration dependence. Journal of Applied Physics, 107 (5). 54503pp. doi:10.1063/1.3296395
Asuha, , Im, Sung-Soon, Tanaka, Masato, Imai, Shigeki, Takahashi, Masao, Kobayashi, Hikaru (2006) Formation of 10–30nm SiO2/Si structure with a uniform thickness at ∼120°C by nitric acid oxidation method. Surface Science, 600 (12). 2523-2527 doi:10.1016/j.susc.2006.04.015
Imai, Shigeki, Fujimoto, Masayuki, Asuha, , Takahashi, Masao, Kobayashi, Hikaru (2006) Formation of atomically smooth SiO2/SiC interfaces at ∼120°C by use of nitric acid oxidation method. Surface Science, 600 (3). 547-550 doi:10.1016/j.susc.2005.11.005
Kobayashi Asuha, Hikaru, Maida, Osamu, Takahashi, Masao, Iwasa, Hitoo (2003) Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density. Journal of Applied Physics, 94 (11). 7328-7335 doi:10.1063/1.1621720
Imamura, Kentarou, Takahashi, Masao, Imai, Shigeki, Kobayashi, Hikaru (2009) Band alignment of SiO2/Si structure formed with nitric acid vapor below 500°C. Surface Science, 603 (7). 968-972 doi:10.1016/j.susc.2009.01.026
Kim, Woo-Byoung, Asuha, , Matsumoto, Taketoshi, Kobayashi, Hikaru (2008) Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics formed by nitric acid oxidation method. Applied Physics Letters, 93 (7). 72101pp. doi:10.1063/1.2970040
Asuha, , Liu, Yueh-Ling, Maida, Osamu, Takahashi, Masao, Kobayashi, Hikaru (2004) Postoxidation Annealing Treatments to Improve Si/Ultrathin SiO[sub 2] Characteristics Formed by Nitric Acid Oxidation. Journal of the Electrochemical Society, 151. doi:10.1149/1.1809594
Asuha, , Kobayashi, Takuya, Takahashi, Masao, Iwasa, Hitoo, Kobayashi, Hikaru (2003) Spectroscopic and electrical properties of ultrathin SiO2 layers formed with nitric acid. Surface Science, 547 (3). 275-283 doi:10.1016/j.susc.2003.09.016
Asuha, , Kobayashi, Takuya, Maida, Osamu, Inoue, Morio, Takahashi, Masao, Todokoro, Yoshihiro, Kobayashi, Hikaru (2002) Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si. Applied Physics Letters, 81 (18). 3410-3412 doi:10.1063/1.1517723
Imai, S., Mizushima, S., Asuha, , Kim, W.-B., Kobayashi, H. (2008) Properties of thick SiO2/Si structure formed at 120°C by use of two-step nitric acid oxidation method. Applied Surface Science, 254. 8054-8058 doi:10.1016/j.apsusc.2008.03.025
Imamura, Kentaro, Matsumoto, Taketoshi, Kobayashi, Hikaru (2012) Optimum condition to fabricate 5–10 nm SiO2/Si structure using advanced nitric acid oxidation of Si method with Si source. Journal of Applied Physics, 112 (12). 124322pp. doi:10.1063/1.4771684
 
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