Kobayashi, Hikaru, Kubota, Tomohiro, Kawa, Hidefumi, Nakato, Yoshihiro, Nishiyama, Masayoshi (1998) Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer. Applied Physics Letters, 73 (7). 933-935 doi:10.1063/1.122042

See Also

These are possibly similar items as determined by title/reference text matching only.

	Kobayashi, Hikaru, Yuasa, Toshiro, Nakato, Yoshihiro, Yoneda, Kenji, Todokoro, Yoshihiro (1996) Low temperature catalytic formation of Si‐based metal–oxide–semiconductor structure. Journal of Applied Physics, 80 (7). 4124-4128 doi:10.1063/1.363284
	Yuasa, Toshiro, Asuha, , Yoneda, Kenji, Todokoro, Yoshihiro, Kobayashi, Hikaru (2000) Reduction in leakage current density of Si-based metal–oxide–semiconductor structure by use of catalytic activity of a platinum overlayer. Applied Physics Letters, 77 (24). 4031-4033 doi:10.1063/1.1331079
	Kobayashi, Hikaru, Asano, Akira, Asada, Shinya, Kubota, Tomohiro, Yamashita, Yoshiyuki, Yoneda, Kenji, Todokoro, Yoshihiro (1998) Studies on interface states at ultrathin SiO2/Si(100) interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by cyanide treatment. Journal of Applied Physics, 83 (4). 2098-2103 doi:10.1063/1.366943
	Kobayashi, Hikaru, Sakurai, Takeaki, Nishiyama, Masayoshi, Nishioka, Yasushiro (2001) Formation of a SiO2/SiC structure at 203 °C by use of perchloric acid. Applied Physics Letters, 78 (16). 2336-2338 doi:10.1063/1.1364510
	Kubota, Tomohiro, Nakato, Yoshihiro, Yoneda, Kenji, Kobayashi, Hikaru (1997) Platinum-enhanced oxidation of GaAs. Physical Review B, 56 (12) 7428-7434 doi:10.1103/physrevb.56.7428
	Shams-Kolahi, Wahid, Kobayashi, Michihiro, Hanzawa, Hiromasa, Kubota, Tomohiro, Kobayashi, Hikaru, Okamoto, Hiroaki, Endo, Shoichi, Kobayashi, Yuki, Hamakawa, Yoshihiro (1996) Valence Band Structure of Si–As–Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space. Japanese Journal of Applied Physics, 35. 6162-6165 doi:10.1143/jjap.35.6162
	Kobayashi, Hikaru, Asano, Akira, Takahashi, Masao, Yoneda, Kenji, Todokoro, Yoshihiro (2000) Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment. Applied Physics Letters, 77 (26). 4392-4394 doi:10.1063/1.1332982
	Asano, Akira, Asuha, , Maida, Osamu, Todokoro, Yoshihiro, Kobayashi, Hikaru (2002) Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment. Applied Physics Letters, 80 (24). 4552-4554 doi:10.1063/1.1484249
	Raghavachari, Krishnan, Pasquarello, Alfredo, Eng, Joseph, Hybertsen, Mark S. (2000) Chemisorption pathways and Si 2p core-level shifts for the interaction of spherosiloxane clusters with Si(100): Implications for photoemission in Si/SiO2 systems. Applied Physics Letters, 76 (26). 3873-3875 doi:10.1063/1.126805
	Giustino, Feliciano, Bongiorno, Angelo, Pasquarello, Alfredo (2002) Modeling of Si 2p core-level shifts at Si–(ZrO2)x(SiO2)1−x interfaces. Applied Physics Letters, 81 (22). 4233-4235 doi:10.1063/1.1526172
	Sakurai, Takeaki, Nishiyama, Masayoshi, Nishioka, Yasushiro, Kobayashi, Hikaru (2002) Low interface state density of SiC-based metal–oxide–semiconductor structure formed with perchloric acid at 203 °C. Applied Physics Letters, 81 (2). 271-273 doi:10.1063/1.1492023