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Opila, Elizabeth J. (1994) Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen. Journal of the American Ceramic Society, 77 (3). 730-736 doi:10.1111/j.1151-2916.1994.tb05357.x

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Reference TypeJournal (article/letter/editorial)
TitleOxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen
JournalJournal of the American Ceramic Society
AuthorsOpila, Elizabeth J.Author
Year1994 (March)Volume77
Issue3
PublisherWiley
DOIdoi:10.1111/j.1151-2916.1994.tb05357.xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID4091691Long-form Identifiermindat:1:5:4091691:4
GUID0
Full ReferenceOpila, Elizabeth J. (1994) Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen. Journal of the American Ceramic Society, 77 (3). 730-736 doi:10.1111/j.1151-2916.1994.tb05357.x
Plain TextOpila, Elizabeth J. (1994) Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen. Journal of the American Ceramic Society, 77 (3). 730-736 doi:10.1111/j.1151-2916.1994.tb05357.x
In(1994, March) Journal of the American Ceramic Society Vol. 77 (3) Wiley

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Opila, Elizabeth J., Nguyen, QuynhGiao N. (2005) Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide. Journal of the American Ceramic Society, 81 (7). 1949-1952 doi:10.1111/j.1151-2916.1998.tb02573.x
Opila, Elizabeth (1995) Influence of Alumina Reaction Tube Impurities on the Oxidation of Chemically-Vapor-Deposited Silicon Carbide. Journal of the American Ceramic Society, 78 (4). 1107-1110 doi:10.1111/j.1151-2916.1995.tb08449.x
Opila, Elizabeth J. (2004) Variation of the Oxidation Rate of Silicon Carbide with Water-Vapor Pressure. Journal of the American Ceramic Society, 82 (3). 625-636 doi:10.1111/j.1151-2916.1999.tb01810.x
Opila, Elizabeth J., Tuller, Harry L. (1994) Thermogravimetric Analysis and Defect Models of the Oxygen Nonstoichiometry in La2-xSrxCuO4-y. Journal of the American Ceramic Society, 77 (10). 2727-2737 doi:10.1111/j.1151-2916.1994.tb04668.x
Narushima, Takayuki, Goto, Takashi, Yokoyama, Yoshio, Takeuchi, Masahito, Iguchi, Yasutaka, Hirai, Toshio (1994) Active-to-Passive Transition and Bubble Formation for High-Temperature Oxidation of Chemically Vapor-Deposited Silicon Carbide in CO-CO2 Atmosphere. Journal of the American Ceramic Society, 77 (4). 1079-1082 doi:10.1111/j.1151-2916.1994.tb07273.x
Narushima, Takayuki, Goto, Takashi, Iguchi, Yasutaka, Hirai, Toshio (1990) High-Temperature Oxidation of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen at 1823 to 1923 K. Journal of the American Ceramic Society, 73 (12). 3580-3584 doi:10.1111/j.1151-2916.1990.tb04261.x
Narushima, Takayuki, Goto, Takashi, Hagiwara, Jun, Iguchi, Yasutaka, Hirai, Toshio (1994) High-Temperature Oxidation of Chemically Vapor-Deposited Silicon Nitride in a Carbon Monoxide-Carbon Dioxide Atmosphere. Journal of the American Ceramic Society, 77 (11). 2921-2925 doi:10.1111/j.1151-2916.1994.tb04525.x
Padture, Nitin P. (1994) In Situ-Toughened Silicon Carbide. Journal of the American Ceramic Society, 77 (2). 519-523 doi:10.1111/j.1151-2916.1994.tb07024.x
Narushima, Takayuki, Goto, Takashi, Hirai, Toshio (1989) High-Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide. Journal of the American Ceramic Society, 72 (8). 1386-1390 doi:10.1111/j.1151-2916.1989.tb07658.x
Fox, Dennis S. (2005) Oxidation Behavior of Chemically-Vapor-Deposited Silicon Carbide and Silicon Nitride from 1200° to 1600°C. Journal of the American Ceramic Society, 81 (4). 945-950 doi:10.1111/j.1151-2916.1998.tb02431.x
GULDEN, T. D. (1971) Stacking Faults in Chemically-Vapor-Deposited Beta Silicon Carbide. Journal of the American Ceramic Society, 54 (10). 498-501 doi:10.1111/j.1151-2916.1971.tb12187.x
 
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