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Gombia, E. (1983) Deep level investigation of Cr/n-GaAs schottky barrier diodes. Materials Chemistry and Physics, 9. 315-320 doi:10.1016/0254-0584(82)90030-x

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Reference TypeJournal (article/letter/editorial)
TitleDeep level investigation of Cr/n-GaAs schottky barrier diodes
JournalMaterials Chemistry and Physics
AuthorsGombia, E.Author
Year1983 (September)Volume9
PublisherElsevier BV
DOIdoi:10.1016/0254-0584(82)90030-xSearch in ResearchGate
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Mindat Ref. ID3048849Long-form Identifiermindat:1:5:3048849:4
GUID0
Full ReferenceGombia, E. (1983) Deep level investigation of Cr/n-GaAs schottky barrier diodes. Materials Chemistry and Physics, 9. 315-320 doi:10.1016/0254-0584(82)90030-x
Plain TextGombia, E. (1983) Deep level investigation of Cr/n-GaAs schottky barrier diodes. Materials Chemistry and Physics, 9. 315-320 doi:10.1016/0254-0584(82)90030-x
In(1983, September) Materials Chemistry and Physics Vol. 9 (1) Elsevier BV

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Franzosi, P., Salviati, G. (1983) Investigation of crystal defects in gaas by X-ray topography and SEM transmission cathodoluminescence. Materials Chemistry and Physics, 9. 321-328 doi:10.1016/0254-0584(82)90031-1
(1983) Contents. Materials Chemistry and Physics, 9. doi:10.1016/0254-0584(82)90002-5
Zanotti, L. (1983) Semi-insulating GaAs technology: Recent and future developments. Materials Chemistry and Physics, 9. 19-28 doi:10.1016/0254-0584(82)90005-0
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Carrà, Sergio, Paorici, Carlo (1983) Preface. Materials Chemistry and Physics, 9. doi:10.1016/0254-0584(82)90003-7
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Fornari, R., Zanotti, L., Zuccalli, G. (1983) Si-doping effect on electrical properties of lec-gaas crystals. Materials Chemistry and Physics, 9. 307-314 doi:10.1016/0254-0584(82)90029-3
 
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