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Tarricone, L. (1983) Investigation of trapping and recombination centers in Zn3xCd3(1−x)In2S6, layered crystals. Materials Chemistry and Physics, 9. 341-348 doi:10.1016/0254-0584(82)90033-5

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of trapping and recombination centers in Zn3xCd3(1−x)In2S6, layered crystals
JournalMaterials Chemistry and Physics
AuthorsTarricone, L.Author
Year1983 (September)Volume9
PublisherElsevier BV
DOIdoi:10.1016/0254-0584(82)90033-5Search in ResearchGate
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Mindat Ref. ID3048852Long-form Identifiermindat:1:5:3048852:8
GUID0
Full ReferenceTarricone, L. (1983) Investigation of trapping and recombination centers in Zn3xCd3(1−x)In2S6, layered crystals. Materials Chemistry and Physics, 9. 341-348 doi:10.1016/0254-0584(82)90033-5
Plain TextTarricone, L. (1983) Investigation of trapping and recombination centers in Zn3xCd3(1−x)In2S6, layered crystals. Materials Chemistry and Physics, 9. 341-348 doi:10.1016/0254-0584(82)90033-5
In(1983, September) Materials Chemistry and Physics Vol. 9 (1) Elsevier BV

See Also

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Di Giulio, M., Micocci, G., Ruggiero, L., Tepore, A., Zuanni, F. (1983) Trapping centers in inse single crystals. Materials Chemistry and Physics, 9. 329-339 doi:10.1016/0254-0584(82)90032-3
Tarricone, L., Zanotti, L. (1984) Photoconductivity and photomemory in ZnXCd1–XIn2S4 layered crystals. Materials Chemistry and Physics, 11. 161-176 doi:10.1016/0254-0584(84)90023-3
(1983) Contents. Materials Chemistry and Physics, 9. doi:10.1016/0254-0584(82)90002-5
Razzetti, C., Lottici, P.P., Zanotti, L. (1983) On the layered phases in ZnxCd1−x In2S4, ZnIn2xGa2(1−x)S4 and CdIn2xGa2(1−x)S4 systems. Materials Chemistry and Physics, 9. 87-92 doi:10.1016/0254-0584(82)90011-6
Gombia, E. (1983) Deep level investigation of Cr/n-GaAs schottky barrier diodes. Materials Chemistry and Physics, 9. 315-320 doi:10.1016/0254-0584(82)90030-x
Franzosi, P., Salviati, G. (1983) Investigation of crystal defects in gaas by X-ray topography and SEM transmission cathodoluminescence. Materials Chemistry and Physics, 9. 321-328 doi:10.1016/0254-0584(82)90031-1
(1983) Editorial Board. Materials Chemistry and Physics, 9. doi:10.1016/0254-0584(82)90001-3
(1983) Forthcoming meeting. Materials Chemistry and Physics, 9. 349pp. doi:10.1016/0254-0584(82)90034-7
Giling, L.J. (1983) Mechanisms of chemical vapour deposition. Materials Chemistry and Physics, 9. 117-138 doi:10.1016/0254-0584(82)90013-x
Galassini, S., Micocci, G., Pennetta, C., Rizzo, A., Tepore, A., Zuanni, F. (1983) Photoconductivity and trapping parameters in hydrogenated amorphous silicon films. Materials Chemistry and Physics, 9. 295-300 doi:10.1016/0254-0584(82)90027-x
Paorici, C. (1983) Developments and trends in semiconductor single-crystal technology. Materials Chemistry and Physics, 9. 1-17 doi:10.1016/0254-0584(82)90004-9
 
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