| Reference Type | Journal (article/letter/editorial) |
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| Title | Si-doping effect on electrical properties of lec-gaas crystals |
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| Journal | Materials Chemistry and Physics |
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| Authors | Fornari, R. | Author |
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| Zanotti, L. | Author |
| Zuccalli, G. | Author |
| Year | 1983 (September) | Volume | 9 |
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| Publisher | Elsevier BV |
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| DOI | doi:10.1016/0254-0584(82)90029-3Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 3048848 | Long-form Identifier | mindat:1:5:3048848:5 |
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| GUID | 0 |
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| Full Reference | Fornari, R., Zanotti, L., Zuccalli, G. (1983) Si-doping effect on electrical properties of lec-gaas crystals. Materials Chemistry and Physics, 9. 307-314 doi:10.1016/0254-0584(82)90029-3 |
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| Plain Text | Fornari, R., Zanotti, L., Zuccalli, G. (1983) Si-doping effect on electrical properties of lec-gaas crystals. Materials Chemistry and Physics, 9. 307-314 doi:10.1016/0254-0584(82)90029-3 |
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| In | (1983, September) Materials Chemistry and Physics Vol. 9 (1) Elsevier BV |
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