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Akimoto, K., Miyajima, T., Okuyama, H., Mori, Y. (1991) Oxide interfacial layer in Au ohmic contacts to p-type ZnSe. Journal of Crystal Growth, 115 (1). 683-686 doi:10.1016/0022-0248(91)90827-r

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Reference TypeJournal (article/letter/editorial)
TitleOxide interfacial layer in Au ohmic contacts to p-type ZnSe
JournalJournal of Crystal Growth
AuthorsAkimoto, K.Author
Miyajima, T.Author
Okuyama, H.Author
Mori, Y.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90827-rSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2804307Long-form Identifiermindat:1:5:2804307:6
GUID0
Full ReferenceAkimoto, K., Miyajima, T., Okuyama, H., Mori, Y. (1991) Oxide interfacial layer in Au ohmic contacts to p-type ZnSe. Journal of Crystal Growth, 115 (1). 683-686 doi:10.1016/0022-0248(91)90827-r
Plain TextAkimoto, K., Miyajima, T., Okuyama, H., Mori, Y. (1991) Oxide interfacial layer in Au ohmic contacts to p-type ZnSe. Journal of Crystal Growth, 115 (1). 683-686 doi:10.1016/0022-0248(91)90827-r
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Miyajima, T., Okuyama, H., Akimoto, K., Mori, Y., Wei, L., Tanigawa, S. (1992) Observation of point defects in ZnSe using the positron annihilation method. Journal of Crystal Growth, 117 (1). 694-697 doi:10.1016/0022-0248(92)90838-a
Miyajima, Takao, Okuyama, Hiroyuki, Akimoto, Katsuhiro (1992) Ti/Pt/Au Ohmic Contacts to n-Type ZnSe. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1743
Nakano, Kazushi, Okuyama, Hiroyuki, Miyajima, Takao, Akimoto, Katsuhiro (1992) Polarization of I2 emission in ZnSe epitaxial layers on (100) GaAs. Journal of Crystal Growth, 117 (1). 797-801 doi:10.1016/0022-0248(92)90859-h
Miyajima, T., Okuyama, H., Akimoto, K., Mori, Y., Wei, L., Tanigawa, S. (1991) Observation of vacancy type defects in Ga‐doped ZnSe using a monoenergetic positron beam. Applied Physics Letters, 59 (12). 1482-1484 doi:10.1063/1.105294
Akimoto, K., Okuyama, H., Ikeda, M., Mori, Y. (1992) Oxygen doping in CdTe, CdS and ZnS. Journal of Crystal Growth, 117 (1). 420-423 doi:10.1016/0022-0248(92)90787-j
Katayama-Yoshida, H., Sasaki, T., Oguchi, T. (1992) Theory of the self-compensation in p-type ZnSe. Journal of Crystal Growth, 117 (1). 625-633 doi:10.1016/0022-0248(92)90827-6
Akimoto, Katsuhiro, Miyajima, Takao, Mori, Yoshifumi (1990) Injection luminescence in oxygen-doped ZnSe grown by molecular beam epitaxy. Journal of Crystal Growth, 101 (1). 1009-1012 doi:10.1016/0022-0248(90)91123-8
Okuno, Y., Asahi, H., Kaneko, T., Itani, Y., Asami, K., Gonda, S. (1991) MOMBE growth of AlGaSb. Journal of Crystal Growth, 115 (1). 236-240 doi:10.1016/0022-0248(91)90745-q
Koide, Y., Hashimoto, K., Ishikawa, H., Tsukui, K., Oku, T., Murakami, Masanori, Teraguchi, N., Tomomura, Y., Suzuki, A. (1996) Cd-based ohmic contact materials to p-ZnSe. Journal of Crystal Growth, 159 (1). 709-713 doi:10.1016/0022-0248(95)00713-x
Kadoiwa, K., Nishimura, T., Hayafuji, N., Miyashita, M., Kizuki, H., Mizuguchi, K. (1991) Study of initial buffer layer in GaAs-on-Si growth. Journal of Crystal Growth, 115 (1). 128-132 doi:10.1016/0022-0248(91)90725-k
Miyata, Y., Glicksman, M.E., Tirmizi, S.H. (1991) Dendritic growth with interfacial energy anisotropy. Journal of Crystal Growth, 110 (4). 683-691 doi:10.1016/0022-0248(91)90624-e
 
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