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Koide, Y., Hashimoto, K., Ishikawa, H., Tsukui, K., Oku, T., Murakami, Masanori, Teraguchi, N., Tomomura, Y., Suzuki, A. (1996) Cd-based ohmic contact materials to p-ZnSe. Journal of Crystal Growth, 159 (1). 709-713 doi:10.1016/0022-0248(95)00713-x

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Reference TypeJournal (article/letter/editorial)
TitleCd-based ohmic contact materials to p-ZnSe
JournalJournal of Crystal Growth
AuthorsKoide, Y.Author
Hashimoto, K.Author
Ishikawa, H.Author
Tsukui, K.Author
Oku, T.Author
Murakami, MasanoriAuthor
Teraguchi, N.Author
Tomomura, Y.Author
Suzuki, A.Author
Year1996 (February)Volume159
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(95)00713-xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2825880Long-form Identifiermindat:1:5:2825880:9
GUID0
Full ReferenceKoide, Y., Hashimoto, K., Ishikawa, H., Tsukui, K., Oku, T., Murakami, Masanori, Teraguchi, N., Tomomura, Y., Suzuki, A. (1996) Cd-based ohmic contact materials to p-ZnSe. Journal of Crystal Growth, 159 (1). 709-713 doi:10.1016/0022-0248(95)00713-x
Plain TextKoide, Y., Hashimoto, K., Ishikawa, H., Tsukui, K., Oku, T., Murakami, Masanori, Teraguchi, N., Tomomura, Y., Suzuki, A. (1996) Cd-based ohmic contact materials to p-ZnSe. Journal of Crystal Growth, 159 (1). 709-713 doi:10.1016/0022-0248(95)00713-x
In(1996, February) Journal of Crystal Growth Vol. 159 (1) Elsevier BV

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Koide, Yasuo, Kawakami, T., Teraguchi, N., Tomomura, Y., Suzuki, A., Murakami, Masanori (1997) Schottky barrier heights of metals contacting to p-ZnSe. Journal of Applied Physics, 82 (5). 2393-2399 doi:10.1063/1.366049
Tadanaga, Osamu, Koide, Yasuo, Hashimoto, Kazuya, Oku, Takeo, Teraguchi, Nobuaki, Tomomura, Yoshitaka, Suzuki, Akira, Murakami, Masanori (1996) Dependence of Electrical Properties on Work Functions of Metals Contacting to p-type ZnSe. Japanese Journal of Applied Physics, 35. 1657-1663 doi:10.1143/jjap.35.1657
Teraguchi, N., Mouri, H., Tomomura, Y., Suzuki, A., Rorison, J., Duggan, G. (1996) Optical and electrical properties of new carrier barrier layer structure of II–VI compounds. Journal of Crystal Growth, 159 (1). 493-497 doi:10.1016/0022-0248(95)00730-x
Teraguchi, N., Hirata, S., Mouri, H., Tomomura, Y., Suzuki, A., Takiguchi, H. (1995) Growth and characterization of N-doped ZnSxSe1−x (0 ≦ x < 0.3) by molecular beam epitaxy. Journal of Crystal Growth, 150. 803-806 doi:10.1016/0022-0248(95)80050-m
Takojima, N., Ishizuka, Y., Tsubono, I., Kimura, N., Suzuki, K., Sawada, T., Imai, K. (1996) Emission mechanism of blue and green bands in ultrathin ZnSeZnTe superlattices. Journal of Crystal Growth, 159 (1). 489-492 doi:10.1016/0022-0248(95)00729-6
Akinaga, H., Miyanishi, S., Suzuki, Y., Tanaka, K., Katayama, T., Ando, K. (1996) Epitaxial growth and magneto-optical study of heterostructures. Journal of Crystal Growth, 159 (1). 1022-1026 doi:10.1016/0022-0248(95)00580-3
Akimoto, K., Miyajima, T., Okuyama, H., Mori, Y. (1991) Oxide interfacial layer in Au ohmic contacts to p-type ZnSe. Journal of Crystal Growth, 115 (1). 683-686 doi:10.1016/0022-0248(91)90827-r
Inoue, K., Yanashima, K., Takahashi, T., Hwang, J.S., Hara, K., Munekata, H., Kukimoto, H. (1996) Growth of p-type ZnSe by metalorganic vapor phase epitaxy using ethylazide as a new nitrogen source. Journal of Crystal Growth, 159 (1). 130-133 doi:10.1016/0022-0248(95)00760-1
Imaizumi, M., Kuroki, H., Endoh, Y., Suita, M., Ohtsuka, K., Isu, T., Namizaki, H., Nunoshita, M. (1996) Low-resistivity p-type ZnSe, ZnSSe and MgZnSSe grown by gas-source molecular beam epitaxy. Journal of Crystal Growth, 159 (1). 257-260 doi:10.1016/0022-0248(95)00571-4
Yokoba, M., Koide, Yasuo, Otsuki, A., Ako, F., Oku, T., Murakami, Masanori (1997) Carrier transport mechanism of Ohmic contact to p-type diamond. Journal of Applied Physics, 81 (10). 6815-6821 doi:10.1063/1.365240
Matsumura, N., Maemura, K., Mori, T., Saraie, J. (1996) Molecular beam epitaxial growth of ZnSe(111) films on misoriented GaAs(111) A substrates. Journal of Crystal Growth, 159 (1). 85-88 doi:10.1016/0022-0248(95)00576-5
 
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