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Takanohashi, Tsugunori, Ozeki, Masashi (1991) Exciton-absorption transitions in (GaP)n(GaAs)n/GaAs atomic-layer superlattices. Journal of Crystal Growth, 115 (1). 538-541 doi:10.1016/0022-0248(91)90801-b

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Reference TypeJournal (article/letter/editorial)
TitleExciton-absorption transitions in (GaP)n(GaAs)n/GaAs atomic-layer superlattices
JournalJournal of Crystal Growth
AuthorsTakanohashi, TsugunoriAuthor
Ozeki, MasashiAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90801-bSearch in ResearchGate
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Mindat Ref. ID2804154Long-form Identifiermindat:1:5:2804154:6
GUID0
Full ReferenceTakanohashi, Tsugunori, Ozeki, Masashi (1991) Exciton-absorption transitions in (GaP)n(GaAs)n/GaAs atomic-layer superlattices. Journal of Crystal Growth, 115 (1). 538-541 doi:10.1016/0022-0248(91)90801-b
Plain TextTakanohashi, Tsugunori, Ozeki, Masashi (1991) Exciton-absorption transitions in (GaP)n(GaAs)n/GaAs atomic-layer superlattices. Journal of Crystal Growth, 115 (1). 538-541 doi:10.1016/0022-0248(91)90801-b
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Takanohashi, Tsugunori, Ozeki, Masashi (1991) Exciton-Transition Energies and Band Structure of (GaP)n(GaAs)n/GaAs Atomic-Layer Superlattices. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l956
Takanohashi, Tsugunori, Ozeki, Masashi (1991) Reflectance Spectroscopy of (GaP)n(GaAs)n/GaAs Atomic Layer Superlattices. Japanese Journal of Applied Physics, 30. 244-245 doi:10.1143/jjap.30.244
Takanohashi, Tsugunori, Ozeki, Masashi (1992) Luminescence characteristics of the (GaP)n(GaAs)n/GaAs atomic layer short‐period superlattices. Journal of Applied Physics, 71 (11). 5614-5618 doi:10.1063/1.350491
Sakuma, Y., Ozeki, M., Kodama, K., Ohtsuka, N. (1991) InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy. Journal of Crystal Growth, 115 (1). 324-327 doi:10.1016/0022-0248(91)90762-t
Fukui, Takashi, Saito, Hisao (1991) Step-flow growth and fractional-layer superlattices on GaAs vicinal surfaces by MOCVD. Journal of Crystal Growth, 115 (1). 61-64 doi:10.1016/0022-0248(91)90712-e
Mochizuki, K., Ozeki, M., Kodama, K., Ohtsuka, N. (1988) Carbon incorporation in GaAs layer grown by atomic layer epitaxy. Journal of Crystal Growth, 93 (1). 557-561 doi:10.1016/0022-0248(88)90583-0
Fukui, Takashi, Saito, Hisao (1991) Step-flow growth and fractional-layer superlattices on ()B GaAs vicinal surfaces. Journal of Crystal Growth, 107 (1). 231-236 doi:10.1016/0022-0248(91)90462-e
Yokoyama, Haruki, Shinohara, Masanori, Inoue, Naohisa (1991) Atomic layer epitaxy of GaAs using N2 carrier gas. Journal of Crystal Growth, 115 (1). 89-93 doi:10.1016/0022-0248(91)90718-k
Ohtsuka, N., Kodama, K., Ozeki, M., Sakuma, Y. (1991) Extremely high Be doping of InGaAs by low-temperature atomic layer epitaxy. Journal of Crystal Growth, 115 (1). 460-463 doi:10.1016/0022-0248(91)90786-5
Kadoiwa, K., Nishimura, T., Hayafuji, N., Miyashita, M., Kizuki, H., Mizuguchi, K. (1991) Study of initial buffer layer in GaAs-on-Si growth. Journal of Crystal Growth, 115 (1). 128-132 doi:10.1016/0022-0248(91)90725-k
Ueda, O., Kitahara, K., Ohtsuka, N., Hobbs, A., Ozeki, M. (1991) Transmission electron microscopic study of AlAs/Si heterostructures grown by atomic layer epitaxy. Journal of Crystal Growth, 115 (1). 133-140 doi:10.1016/0022-0248(91)90726-l
 
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