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Ohtsuka, N., Kodama, K., Ozeki, M., Sakuma, Y. (1991) Extremely high Be doping of InGaAs by low-temperature atomic layer epitaxy. Journal of Crystal Growth, 115 (1). 460-463 doi:10.1016/0022-0248(91)90786-5

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Reference TypeJournal (article/letter/editorial)
TitleExtremely high Be doping of InGaAs by low-temperature atomic layer epitaxy
JournalJournal of Crystal Growth
AuthorsOhtsuka, N.Author
Kodama, K.Author
Ozeki, M.Author
Sakuma, Y.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90786-5Search in ResearchGate
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Mindat Ref. ID2804064Long-form Identifiermindat:1:5:2804064:4
GUID0
Full ReferenceOhtsuka, N., Kodama, K., Ozeki, M., Sakuma, Y. (1991) Extremely high Be doping of InGaAs by low-temperature atomic layer epitaxy. Journal of Crystal Growth, 115 (1). 460-463 doi:10.1016/0022-0248(91)90786-5
Plain TextOhtsuka, N., Kodama, K., Ozeki, M., Sakuma, Y. (1991) Extremely high Be doping of InGaAs by low-temperature atomic layer epitaxy. Journal of Crystal Growth, 115 (1). 460-463 doi:10.1016/0022-0248(91)90786-5
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Sakuma, Y., Ozeki, M., Kodama, K., Ohtsuka, N. (1991) InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy. Journal of Crystal Growth, 115 (1). 324-327 doi:10.1016/0022-0248(91)90762-t
Sakuma, Y., Ozeki, M., Kodama, K., Ohtsuka, N. (1991) Role of interface strain in atomic layer epitaxy growth kinetics of InxGa1−xAs. Journal of Crystal Growth, 114 (1). 31-37 doi:10.1016/0022-0248(91)90675-u
Ozeki, M., Ohtsuka, N., Sakuma, Y., Kodama, K. (1991) Pulsed jet epitaxy of III–V compounds. Journal of Crystal Growth, 107 (1). 102-110 doi:10.1016/0022-0248(91)90441-7
Kodama, K., Ozeki, M., Sakuma, Y., Mochizuki, K., Ohtsuka, N. (1990) In situ X-ray photoemission spectroscopy for atomic layer epitaxy of InP and GaAs. Journal of Crystal Growth, 99 (1). 535-539 doi:10.1016/0022-0248(90)90578-9
Mochizuki, K., Ozeki, M., Kodama, K., Ohtsuka, N. (1988) Carbon incorporation in GaAs layer grown by atomic layer epitaxy. Journal of Crystal Growth, 93 (1). 557-561 doi:10.1016/0022-0248(88)90583-0
Ueda, O., Kitahara, K., Ohtsuka, N., Hobbs, A., Ozeki, M. (1991) Transmission electron microscopic study of AlAs/Si heterostructures grown by atomic layer epitaxy. Journal of Crystal Growth, 115 (1). 133-140 doi:10.1016/0022-0248(91)90726-l
Ohtsuka, N., Kitahara, K., Ozeki, M., Kodama, K. (1990) A new GaAs on Si structure using AlAs buffer layers grown by atomic layer epitaxy. Journal of Crystal Growth, 99 (1). 346-351 doi:10.1016/0022-0248(90)90541-r
Sakuma, Y., Ozeki, M., Nakajima, K. (1993) Arsenic desorption from the InAs(001) growth surface during atomic layer epitaxy. Journal of Crystal Growth, 130 (1). 147-152 doi:10.1016/0022-0248(93)90846-o
Takanohashi, Tsugunori, Ozeki, Masashi (1991) Exciton-absorption transitions in (GaP)n(GaAs)n/GaAs atomic-layer superlattices. Journal of Crystal Growth, 115 (1). 538-541 doi:10.1016/0022-0248(91)90801-b
Kodama, K., Ozeki, M., Sakuma, Y., Ohtsuka, N. (1991) Raman scattering of (GaAs)n(GaP)nshort‐period superlattices prepared by pulsed jet epitaxy. Journal of Applied Physics, 69 (9). 6713-6715 doi:10.1063/1.348893
Ohtsuka, K., Ohishi, T., Abe, Y., Sugimoto, H., Matsui, T. (1990) High resistivity InP layer grown by low temperature liquid phase epitaxy. Journal of Crystal Growth, 106 (2). 467-470 doi:10.1016/0022-0248(90)90092-y
 
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